BLF6G20LS-75 NXP Semiconductors, BLF6G20LS-75 Datasheet - Page 10

• Manufacturer Part Number: BLF6G20LS-75
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G20LS-75

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.235 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 18 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SOT502B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G20LS-75,112

NXP Semiconductors
10. Abbreviations
11. Revision history
Table 10.
BLF6G20-75_BLF6G20LS-75_2
Product data sheet
Document ID
BLF6G20-75_BLF6G20LS-75_2 20090209
Modifications:
BLF6G20-75_1
BLF6G20LS-75_1
Revision history
Table 9.
Acronym
CDMA
CW
EDGE
EVM
GSM
LDMOS
LDMOST
RF
RMS
VSWR
W-CDMA
Release date
20080306
20080218
•
•
•
•
Abbreviations
The document now describes both the eared and earless version of this product:
BLF6G20-75 and BLF6G20LS-75 respectively
Table 7 on page
Table 7 on page
Table 7 on page
Description
Code Division Multiple Access
Continuous Wave
Enhanced Data rates for GSM Evolution
Error Vector Magnitude
Global System for Mobile communications
Laterally Diffused Metal-Oxide Semiconductor
Laterally Diffused Metal-Oxide Semiconductor Transistor
Radio Frequency
Root Mean Square
Voltage Standing-Wave Ratio
Wideband Code Division Multiple Access
Rev. 02 — 9 February 2009
Data sheet status
Product data sheet
Preliminary data sheet
Preliminary data sheet
3: changed the minimum value for
3: changed the maximum value for EVM
3: changed the maximum value for EVM
BLF6G20-75; BLF6G20LS-75
Change notice
-
-
-
D
Power LDMOS transistor
rms
M
Supersedes
BLF6G20-75_1
BLF6G20LS-75_1
-
-
© NXP B.V. 2009. All rights reserved.
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