BLF6G20LS-75 NXP Semiconductors, BLF6G20LS-75 Datasheet - Page 5

• Manufacturer Part Number: BLF6G20LS-75
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G20LS-75

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.235 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 18 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SOT502B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G20LS-75,112

NXP Semiconductors
BLF6G20-75_BLF6G20LS-75_2
Product data sheet
Fig 3.
Fig 5.
(dBc)
IMD
(dB)
G
p
20
40
60
80
20
18
16
14
0
0
0
V
f
Two-tone CW intermodulation distortion as
function of peak envelope load power; typical
values
V
GSM-EDGE power gain and drain efficiency as
functions of average load power; typical
values
2
DS
DS
= 1900.05 MHz.
= 28 V; I
= 28 V; I
G
7.4 GSM-EDGE
D
p
20
Dq
Dq
60
= 550 mA; f
= 550 mA; f = 1990 MHz; T
40
1
= 1989.95 MHz;
120
P
60
L(PEP)
P
L(AV)
001aah676
001aah678
IMD3
IMD5
IMD7
(W)
(W)
case
Rev. 02 — 9 February 2009
180
80
60
40
20
0
= 25 C.
(%)
D
BLF6G20-75; BLF6G20LS-75
Fig 4.
Fig 6.
ACPR
IMD3
(dBc)
(dB)
(1) 450 MHz
(2) 500 MHz
(3) 550 MHz
(4) 600 MHz
(5) 650 MHz
20
40
60
80
50
60
70
80
0
0
V
Third order intermodulation distortion as a
function of peak envelope load power; typical
values
0
V
GSM-EDGE ACPR at 400 kHz and at 600 kHz as
functions of average load power; typical
values
DS
DS
= 28 V; f
= 28 V; I
20
1
ACPR
Dq
ACPR
60
= 1989.95 MHz; f
= 550 mA; f = 1990 MHz; T
(1)
(2)
(3)
(4)
(5)
400k
600k
40
Power LDMOS transistor
120
2
P
= 1900.05 MHz.
60
L(PEP)
© NXP B.V. 2009. All rights reserved.
P
L(AV)
001aah677
001aah679
(W)
(W)
case
180
80
= 25 C.
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