BLF6G20LS-75 NXP Semiconductors, BLF6G20LS-75 Datasheet - Page 3

• Manufacturer Part Number: BLF6G20LS-75
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G20LS-75

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.235 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 18 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SOT502B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G20LS-75,112

NXP Semiconductors
5. Thermal characteristics
6. Characteristics
7. Application information
BLF6G20-75_BLF6G20LS-75_2
Product data sheet
7.1 Ruggedness in class-AB operation
Table 5.
Table 6.
T
Table 7.
Mode of operation: GSM EDGE; f = 1930 MHz and 1990 MHz; RF performance at V
I
The BLF6G20-75 and BLF6G20LS-75 are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
V
Symbol Parameter
R
Symbol Parameter
V
V
V
I
I
I
g
R
C
Symbol
P
G
RL
ACPR
ACPR
EVM
EVM
Dq
DSS
DSX
GSS
j
fs
DS
D
(BR)DSS
GS(th)
GSq
L(AV)
th(j-case)
DS(on)
rs
p
= 25 C unless otherwise specified.
= 550 mA; T
in
= 28 V; I
rms
M
400k
600k
drain-source breakdown voltage V
gate-source threshold voltage
gate-source quiescent voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state
resistance
feedback capacitance
thermal resistance
from junction to case
Thermal characteristics
Characteristics
Application information
Parameter
average output power
power gain
input return loss
drain efficiency
adjacent channel power ratio (400 kHz) P
adjacent channel power ratio (600 kHz) P
RMS EDGE signal distortion error
peak EDGE signal distortion error
Dq
case
= 550 mA; P
= 25 C; unless otherwise specified; in a class-AB production test circuit.
Rev. 02 — 9 February 2009
BLF6G20-75; BLF6G20LS-75
L
= 75 W (CW); f = 1990 MHz.
Conditions
T
P
case
L
= 29.5 W (CW)
= 80 C;
Conditions
V
V
V
V
V
V
V
V
I
V
f = 1 MHz
D
GS
DS
DS
GS
GS
DS
GS
DS
GS
GS
= 3.5 A
= 10 V; I
= 28 V; I
= 10 V
= 10 V; I
= 0 V; I
= 0 V; V
= V
= 11 V; V
= V
= 0 V; V
GS(th)
GS(th)
Conditions
P
P
P
P
P
L(AV)
L(AV)
L(AV)
L(AV)
L(AV)
L(AV)
L(AV)
D
DS
DS
D
D
D
= 0.5 mA
+ 3.75 V;
+ 3.75 V;
DS
= 100 mA
= 600 mA
= 5 A
= 28 V
= 28 V;
= 29.5 W
= 29.5 W
= 29.5 W
= 29.5 W
= 29.5 W
= 29.5 W
= 29.5 W
= 0 V
Type
BLF6G20-75
BLF6G20LS-75
Power LDMOS transistor
Min Typ
-
17.5 19
-
33.5 37.5
-
-
-
-
Min Typ Max
65
1.4
1.6
-
14.9 18.5 -
-
-
-
-
© NXP B.V. 2009. All rights reserved.
29.5
1.7
4.8
10
61.5
73
-
2
2.1
-
-
7
0.15 0.235
1.6
DS
Max
-
-
-
3
10
-
2.4
2.6
3
300
-
-
= 28 V;
5.5
59.5 dBc
69.5 dBc
Typ Unit
0.9
0.75 K/W
3 of 12
Unit
W
dB
dB
%
%
%
K/W
Unit
V
V
V
A
nA
S
pF
A