BLF6G20LS-75 NXP Semiconductors, BLF6G20LS-75 Datasheet - Page 6

• Manufacturer Part Number: BLF6G20LS-75
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G20LS-75

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.235 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 18 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SOT502B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G20LS-75,112

NXP Semiconductors
8. Test information
BLF6G20-75_BLF6G20LS-75_2
Product data sheet
Fig 7.
Fig 9.
EVM
EVM
(%)
rms
M
20
16
12
,
8
4
0
0
V
GSM EDGE RMS EVM and peak EVM as
functions of average load power; typical
values
See
Test circuit for operation at 1990 MHz
DS
V
input
50
GG
= 28 V; I
Table 8
20
for list of components.
Dq
= 550 mA; f = 1990 MHz; T
C1
C7
40
EVM
M
C2
60
EVM
P
L(AV)
C3
001aah680
rms
R1
(W)
case
C4
Rev. 02 — 9 February 2009
80
= 25 C.
C5
BLF6G20-75; BLF6G20LS-75
C6
V
DD
Fig 8.
ACPR
(dBc)
C8
400k
52
56
60
64
68
C13
0
V
GSM EDGE ACPR at 400 kHz and RMS EVM as
functions of drain efficiency; typical values
C9
DS
= 28 V; I
C10
ACPR
20
C11
400k
Dq
= 550 mA; f = 1990 MHz; T
40
EVM
Power LDMOS transistor
rms
C12
60
© NXP B.V. 2009. All rights reserved.
001aaf236
001aah681
D
output
50
(%)
case
80
EVM
8
6
4
2
0
= 25 C.
(%)
rms
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