BLF4G20S-110B NXP Semiconductors, BLF4G20S-110B Datasheet
BLF4G20S-110B
Specifications of BLF4G20S-110B
Related parts for BLF4G20S-110B
BLF4G20S-110B Summary of contents
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... BLF4G20-110B; BLF4G20S-110B UHF power LDMOS transistor Rev. 01 — 23 January 2006 1. Product profile 1.1 General description 110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1930 MHz to 1990 MHz; T Mode of operation CW GSM EDGE [1] ACPR [2] ACPR CAUTION This device is sensitive to ElectroStatic Discharge (ESD) ...
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... Internally matched for ease of use 1.3 Applications RF power amplifiers for GSM, GSM EDGE and CDMA base stations and multicarrier applications in the 1800 MHz to 2000 MHz frequency range. 2. Pinning information Table 2: Pin BLF4G20-110B (SOT502A BLF4G20S-110B (SOT502B [1] Connected to flange 3. Ordering information Table 3: Type number BLF4G20-110B BLF4G20S-110B ...
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... V GS(th) V GSq I DSS I DSX I GSS DS(on 9397 750 14611 Product data sheet BLF4G20-110B; BLF4G20S-110B Limiting values Parameter drain-source voltage gate-source voltage drain current storage temperature junction temperature Thermal characteristics Parameter thermal resistance from junction to case Characteristics Conditions drain-source breakdown voltage ...
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... Ruggedness in class-AB operation The BLF4G20(S)-110B is capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions 650 mA 9397 750 14611 Product data sheet BLF4G20-110B; BLF4G20S-110B Application information = 700 mA unless otherwise specified class-AB production test Dq case Parameter Conditions ...
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... IMD (dBc 650 mA 1990 MHz Fig 3. Intermodulation distortion as a function of average load power; typical values 9397 750 14611 Product data sheet BLF4G20-110B; BLF4G20S-110B 001aac387 60 (dB) D (%) 120 160 P ( case Fig 2. Two-tone CW power gain and drain efficiency 001aac389 IMD3 (dBc) IMD3 ...
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... EVM (%) 650 mA 1990 MHz Fig 7. GSM EDGE rms EVM and peak EVM as functions of average load power; typical values 9397 750 14611 Product data sheet BLF4G20-110B; BLF4G20S-110B 001aac391 50 ACPR D (dBc) (%) (W) L(AV case Fig 6. GSM EDGE ACPR at 400 kHz and at 600 kHz as ...
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... Philips Semiconductors 8. Test information input 50 Fig 9. Test circuit for operation at 1990 MHz 12 Fig 10. Component layout for 1990 MHz test circuit 9397 750 14611 Product data sheet BLF4G20-110B; BLF4G20S-110B See Table 8 for list of components Striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) ( thickness = 0 ...
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... C2, C4, C8 C3, C10 C11 R1 W1 [1] American Technical Ceramics type 100B or capacitor of same quality. 9397 750 14611 Product data sheet BLF4G20-110B; BLF4G20S-110B List of components (see Figure 9 [1] multilayer ceramic chip capacitor [1] multilayer ceramic chip capacitor multilayer ceramic chip capacitor [1] multilayer ceramic chip ...
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... D UNIT 4.72 12.83 20.02 0.15 mm 3.43 12.57 0.08 19.61 0.186 0.505 0.006 0.788 inches 0.495 0.135 0.003 0.772 OUTLINE VERSION IEC SOT502A Fig 11. Package outline SOT502A 9397 750 14611 Product data sheet BLF4G20-110B; BLF4G20S-110B scale 19.96 9.50 9.53 1.14 19.94 5 ...
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... D UNIT 4.72 12.83 20.02 0.15 mm 3.43 12.57 0.08 19.61 0.186 0.505 0.006 0.788 inches 0.495 0.135 0.003 0.772 OUTLINE VERSION IEC SOT502B Fig 12. Package outline SOT502B 9397 750 14611 Product data sheet BLF4G20-110B; BLF4G20S-110B scale 19.96 9.50 9.53 1.14 19.94 5 ...
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... GSM I Dq LDMOS PEP RF VSWR 9397 750 14611 Product data sheet BLF4G20-110B; BLF4G20S-110B List of abbreviations Description Adjacent Channel Power Ratio Code Division Multiple Access Continuous Wave Enhanced Data rates for GSM Evolution Error Vector Magnitude Global System for Mobile communications quiescent drain current ...
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... Philips Semiconductors 11. Revision history Table 10: Revision history Document ID BLF4G20-110B_4G20S-110B_1 9397 750 14611 Product data sheet BLF4G20-110B; BLF4G20S-110B Release Data sheet status date 20060123 Product data sheet Rev. 01 — 23 January 2006 UHF power LDMOS transistor Change Doc. number notice - 6397 750 14611 - © ...
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... For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com 9397 750 14611 Product data sheet BLF4G20-110B; BLF4G20S-110B [2] [3] Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. ...
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... Trademarks Contact information . . . . . . . . . . . . . . . . . . . . 13 BLF4G20-110B; BLF4G20S-110B © Koninklijke Philips Electronics N.V. 2006 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice ...