BLF4G20S-110B NXP Semiconductors, BLF4G20S-110B Datasheet - Page 6

• Manufacturer Part Number: BLF4G20S-110B
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF4G20S-110B

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.09 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 15 V
• Continuous Drain Current: 12 A
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: LDMOST-3
• Application: UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 100W(Typ)
• Power Gain (typ)@vds: 13.5@28VdB
• Frequency (min): 1.8GHz
• Frequency (max): 2GHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 9S
• Drain Source Resistance (max): 90(Typ)@9.5Vmohm
• Reverse Capacitance (typ): 2.5@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 38.5%
• Mounting: Surface Mount
• Mode Of Operation: 2-Tone
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF4G20S-110B,112

Philips Semiconductors
9397 750 14611
Product data sheet
Fig 5. GSM EDGE power gain and drain efficiency as
Fig 7. GSM EDGE rms EVM and peak EVM as
EVM
(dB)
(%)
G
p
15
14
13
12
11
10
12
8
4
0
V
f = 1990 MHz
functions of average load power; typical values
V
f = 1990 MHz
functions of average load power; typical values
0
0
DS
DS
= 28 V; I
= 28 V; I
20
20
Dq
Dq
G
= 650 mA; T
= 650 mA; T
D
p
40
40
case
case
= 25 C;
= 25 C;
EVM
60
EVM
60
P
P
rms
L(AV)
L(AV)
001aac391
001aac393
M
BLF4G20-110B; BLF4G20S-110B
(W)
(W)
Rev. 01 — 23 January 2006
80
80
50
40
30
20
10
0
(%)
D
Fig 6. GSM EDGE ACPR at 400 kHz and at 600 kHz as
Fig 8. GSM EDGE ACPR at 400 kHz and rms EVM as
ACPR
ACPR
(dBc)
(dBc)
56
60
64
68
72
50
60
70
80
90
V
f = 1990 MHz
functions of average load power; typical values
V
f = 1990 MHz
functions of drain efficiency; typical values
0
0
DS
DS
= 28 V; I
= 28 V; I
10
20
Dq
ACPR
Dq
EVM
ACPR
ACPR
= 650 mA; T
= 650 mA; T
rms
400
20
UHF power LDMOS transistor
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
400
600
40
30
case
case
= 25 C;
= 25 C;
60
40
P
L(AV)
001aac394
001aac392
D
(%)
(W)
50
80
4
3
2
1
0
EVM
(%)
6 of 14