BF1208D T/R NXP Semiconductors, BF1208D T/R Datasheet - Page 19

• Manufacturer Part Number: BF1208D T/R
• Description: RF MOSFET Small Signal TAPE-7 MOS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BF1208D T/R

• Configuration: Dual
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 6 V
• Gate-source Breakdown Voltage: 6 V
• Continuous Drain Current: 0.03 A
• Power Dissipation: 180 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SS-Mini-6
• Application: VHF/UHF
• Channel Type: N
• Drain Source Voltage (max): 6V
• Power Gain (typ)@vds: 36@5V@Amp A/35@5V@Amp BdB
• Noise Figure (max): 1.7@Amp A/2@Amp BdB
• Package Type: SOT-666
• Pin Count: 6
• Input Capacitance (typ)@vds: 2.1@5V@Gate 1/3.4@5V@Gate 2pF
• Output Capacitance (typ)@vds: 0.8@5VpF
• Reverse Capacitance (typ): 0.03@5VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 2
• Power Dissipation (max): 180mW
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BF1208D,115

NXP Semiconductors
10. Package outline
Fig 35. Package outline SOT666
BF1208D_1
Product data sheet
Plastic surface-mounted package; 6 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
OUTLINE
VERSION
SOT666
0.6
0.5
A
S
0.27
0.17
b
p
pin 1 index
0.18
0.08
c
IEC
Y S
6
1
e 1
1.7
1.5
D
D
e
1.3
1.1
b p
E
5
2
JEDEC
0
1.0
e
3
REFERENCES
4
Rev. 01 — 16 May 2007
0.5
e
1
w
A
M
1.7
1.5
A
H
E
JEITA
scale
1
0.3
0.1
L
p
0.1
w
A
0.1
y
2 mm
H E
Dual N-channel dual gate MOSFET
E
detail X
PROJECTION
EUROPEAN
L p
BF1208D
c
© NXP B.V. 2007. All rights reserved.
X
ISSUE DATE
04-11-08
06-03-16
SOT666
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