BF1208D T/R NXP Semiconductors, BF1208D T/R Datasheet

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BF1208D T/R

Manufacturer Part Number
BF1208D T/R
Description
RF MOSFET Small Signal TAPE-7 MOS-RFSS
Manufacturer
NXP Semiconductors
Datasheet
1.BF1208D_TR.pdf (22 pages)

Specifications of BF1208D T/R

Configuration
Dual
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
6 V
Gate-source Breakdown Voltage
6 V
Continuous Drain Current
0.03 A
Power Dissipation
180 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Package / Case
SS-Mini-6
Application
VHF/UHF
Channel Type
N
Drain Source Voltage (max)
6V
Power Gain (typ)@vds
36@5V@Amp A/35@5V@Amp BdB
Noise Figure (max)
1.7@Amp A/2@Amp BdB
Package Type
SOT-666
Pin Count
6
Input Capacitance (typ)@vds
2.1@5V@Gate 1/3.4@5V@Gate 2pF
Output Capacitance (typ)@vds
0.8@5VpF
Reverse Capacitance (typ)
0.03@5VpF
Operating Temp Range
-65C to 150C
Mounting
Surface Mount
Number Of Elements
2
Power Dissipation (max)
180mW
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BF1208D,115
1. Product profile
CAUTION
1.1 General description
1.2 Features
1.3 Applications
The BF1208D is a combination of two dual gate MOSFET amplifiers with shared source
and gate2 leads and an integrated switch. The integrated switch is operated by the gate1
bias of amplifier B.
The source and substrate are interconnected. Internal bias circuits enable
DC stabilization and a very good cross modulation performance during Automatic Gain
Control (AGC). Integrated diodes between the gates and source protect against excessive
input voltage surges. The transistor has a SOT666 micro-miniature plastic package.
I
I
I
I
I
I
BF1208D
Dual N-channel dual gate MOSFET
Rev. 01 — 16 May 2007
Two low noise gain controlled amplifiers in a single package. One with a fully
integrated bias and one with a partly integrated bias
Internal switch to save external components
Superior cross modulation performance during AGC
High forward transfer admittance
High forward transfer admittance to input capacitance ratio
Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply
voltage
N
N
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
digital and analog television tuners
professional communication equipment
Product data sheet

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BF1208D T/R Summary of contents

Page 1

BF1208D Dual N-channel dual gate MOSFET Rev. 01 — 16 May 2007 1. Product profile 1.1 General description The BF1208D is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch. The ...

Page 2

... NXP Semiconductors 1.4 Quick reference data Table 1. Per MOSFET unless otherwise specified. Symbol Parameter tot iss(G1) C rss NF Xmod [2] Calculated from S-parameters. [3] Measured in [4] Measured in 2. Pinning information Table 2. Pin BF1208D_1 Product data sheet Quick reference data Conditions drain-source voltage ...

Page 3

... NXP Semiconductors 3. Ordering information Table 3. Type number BF1208D 4. Marking Table 4. Type number BF1208D 5. Limiting values Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Per MOSFET tot T stg the temperature at the soldering point of the source lead. sp Fig 1. Power derating curve ...

Page 4

... NXP Semiconductors 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter R thermal resistance from junction to solder point th(j-sp) 7. Static characteristics Table 7. Static characteristics unless otherwise specified. j Symbol Parameter Per MOSFET; unless otherwise specified V drain-source breakdown voltage (BR)DSS V gate1-source breakdown voltage (BR)G1-SS ...

Page 5

... NXP Semiconductors (mA (4) ( D( D( 100 k . D( 100 k . D( D( D(A) G1 Fig 2. Drain currents of MOSFET A and function Dynamic characteristics 8.1 Dynamic characteristics for amplifier A Table 8. Dynamic characteristics for amplifier A Common source amb G2-S Symbol Parameter y forward transfer admittance ...

Page 6

... NXP Semiconductors Table 8. Dynamic characteristics for amplifier A Common source amb G2-S Symbol Parameter Xmod cross modulation [1] For the MOSFET not in use: V G1-S(B) [2] Calculated from S-parameters. [3] Measured in Figure 33 test circuit. 8.1.1 Graphics for amplifi (mA 0.4 0.8 ( G2-S ( 3.5 V. G2-S ( G2-S ( ...

Page 7

... NXP Semiconductors (mS ( G2-S ( 3.5 V. G2-S ( G2-S ( 2.5 V. G2-S ( G2-S ( 1 DS(A) G1-S(B) DS(B) Fig 6. Amplifier A: forward transfer admittance as a function of drain current; typical values BF1208D_1 Product data sheet 001aaa556 20 I D(A) (mA) (1) 16 (2) 12 (3) ( (mA Fig 7. Amplifier A: drain current as a function of Rev. 01 — ...

Page 8

... NXP Semiconductors (mA DS(A) DS(B) sup G2 (connected to ground); see G1 Fig 8. Amplifier A: drain current of amplifi function of supply voltage of A and B amplifier; typical values 120 V unw (dB V) 110 100 DS(A) DS(B) G1-S( MHz see unw amb Fig 10. Amplifier A: unwanted voltage for 1 % cross modulation as a function of gain reduction ...

Page 9

... NXP Semiconductors (mA DS(A) DS(B) G1-S( see Figure 33. amb Fig 12. Amplifier A: drain current as a function of gain reduction; typical values (mS DS(A) G2 D(A) Fig 14. Amplifier A: forward transfer admittance and phase as a function of frequency; typical values BF1208D_1 Product data sheet 001aac197 b is (mS) ...

Page 10

... NXP Semiconductors Fig 16. Amplifier A: output admittance as a function of frequency; typical values 8.1.2 Scattering parameters for amplifier A Table DS(A) f (MHz) 40 100 200 300 400 500 600 700 800 900 1000 8.1.3 Noise data for amplifier A Table 10 DS(A) unless otherwise specified. ...

Page 11

... NXP Semiconductors 8.2 Dynamic characteristics for amplifier B Table 11. Dynamic characteristics for amplifier B Common source amb Symbol Parameter y forward transfer admittance fs C input capacitance at gate1 iss(G1) C input capacitance at gate2 iss(G2) C output capacitance oss C reverse transfer capacitance f = 100 MHz rss G transducer power gain ...

Page 12

... NXP Semiconductors 8.2.1 Graphics for amplifi (mA 0.4 0.8 ( G2-S ( 3.5 V. G2-S ( G2-S ( 2.5 V. G2-S ( G2-S ( 1.5 V. G2 DS(B) DS(A) G1-S(A) Fig 17. Amplifier B: transfer characteristics; typical values BF1208D_1 Product data sheet 001aag361 (1) (2) (mA) (3) (4) (5) (6) (7) 1.2 1.6 2.0 V (V) ...

Page 13

... NXP Semiconductors 100 0.4 0.8 ( G2-S ( 3.5 V. G2-S ( G2-S ( 2.5 V. G2-S ( G2-S ( 1.5 V. G2 DS(B) DS(A) G1-S(A) Fig 19. Amplifier B: gate1 current as a function of gate1 voltage; typical values (mA DS(B) G2 Fig 21. Amplifier B: drain current as a function of gate1 current; typical values BF1208D_1 ...

Page 14

... NXP Semiconductors ( 100 ( 120 ( 150 ( 180 G2-S DS(A) G1-S( connected see G1 GG Fig 23. Amplifier B: drain current as a function of gate1 supply voltage and drain supply voltage; typical values BF1208D_1 Product data sheet 001aag367 (1) (mA) (2) (3) (4) (5) (6) (7) ( (1) V (2) V (3) V ( ...

Page 15

... NXP Semiconductors ( DS(B) DS(A) G1-S( (connected Fig 25. Amplifier B: gate1 current as a function of gate2 voltage; typical values 0 gain reduction (dB DS(B) GG DS( (connected see Figure 34. amb Fig 27. Amplifier B: gain reduction as a function of AGC voltage; typical values BF1208D_1 Product data sheet ...

Page 16

... NXP Semiconductors (mS DS(B) G2 D(B) Fig 29. Amplifier B: input admittance as a function of frequency; typical values DS(B) G2 D(B) Fig 31. Amplifier B: reverse transfer admittance and phase as a function of frequency; typical values BF1208D_1 Product data sheet 001aag373 (mS (MHz DS(A) G1-S(A) Fig 30. Amplifier B: forward transfer admittance and ...

Page 17

... NXP Semiconductors 8.2.2 Scattering parameters for amplifier B Table 12 DS(B) f (MHz) 40 100 200 300 400 500 600 700 800 900 1000 8.2.3 Noise data for amplifier B Table 13 DS(B) unless otherwise specified. f (MHz) 400 800 BF1208D_1 Product data sheet Scattering parameters for amplifi ...

Page 18

... NXP Semiconductors 9. Test information Fig 33. Cross modulation test set-up for amplifier A Fig 34. Cross modulation test set-up for amplifier B BF1208D_1 Product data sheet V AGC 10 k 4.7 nF G1A R GEN 4 BF1208D 4 G1B AGC 10 k 4.7 nF G1A 4 BF1208D 4.7 nF G1B R GEN Rev. 01 — 16 May 2007 ...

Page 19

... NXP Semiconductors 10. Package outline Plastic surface-mounted package; 6 leads pin 1 index DIMENSIONS (mm are the original dimensions) UNIT 0.6 0.27 0.18 1.7 mm 0.5 0.17 0.08 1.5 OUTLINE VERSION IEC SOT666 Fig 35. Package outline SOT666 BF1208D_1 Product data sheet scale 1.3 1.7 0.3 1.0 ...

Page 20

... NXP Semiconductors 11. Abbreviations Table 14. Acronym AGC DC MOSFET UHF VHF 12. Revision history Table 15. Revision history Document ID Release date BF1208D_1 20070516 BF1208D_1 Product data sheet Abbreviations Description Automatic Gain Control Direct Current Metal-Oxide Semiconductor Field-Effect Transistor Ultra High Frequency Very High Frequency Data sheet status Product data sheet Rev. 01 — ...

Page 21

... For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail ...

Page 22

... NXP Semiconductors 15. Contents 1 Product profi 1.1 General description 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 3 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 5 Limiting values Thermal characteristics Static characteristics Dynamic characteristics . . . . . . . . . . . . . . . . . . 5 8.1 Dynamic characteristics for amplifi 8.1.1 Graphics for amplifi 8.1.2 Scattering parameters for amplifi ...

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