BLS2731-20 TRAY NXP Semiconductors, BLS2731-20 TRAY Datasheet - Page 6

• Manufacturer Part Number: BLS2731-20 TRAY
• Description: RF Bipolar Power BULKTR TNS-MICL
• Manufacturer: NXP Semiconductors

Specifications of BLS2731-20 TRAY

• Dc Collector/base Gain Hfe Min: 40
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Transistor Polarity: NPN
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 75 V
• Emitter- Base Voltage Vebo: 2 V
• Power Dissipation: 270000 mW
• Package / Case: SOT-445
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLS2731-20,114

Philips Semiconductors
PACKAGE OUTLINE
1998 Nov 25
Flanged hermetic ceramic package; 2 mounting holes; 2 leads
Microwave power transistor
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT445C
5.57
4.70
A
H
3.15
2.95
U 2
A
A
b
0.15
0.09
c
IEC
8.13
7.87
D
7.65
7.35
D 1
8.15
7.85
JEDEC
D 2
D 1
D 2
U 1
D
q
b
REFERENCES
4.20
3.93
3
E
0
1
2
4.25
3.95
E 1
w 2
M
scale
EIAJ
5.31
5.01
E 2
6
5
C
p
C
1.82
1.22
F
10 mm
15.84
14.64
w 1
F
B
H
M
A B
3.35
3.05
p
3.33
3.03
Q
E 2
PROJECTION
EUROPEAN
E 1
14.22
q
20.47
20.17
U 1
Q
c
BLS2731-20
Product specification
5.18
4.98
U 2
ISSUE DATE
97-05-23
0.51
E
w 1
SOT445C
1.02
w 2