BF1105WR T/R NXP Semiconductors, BF1105WR T/R Datasheet - Page 15

• Manufacturer Part Number: BF1105WR T/R
• Description: RF MOSFET Small Signal TAPE-7 MOS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BF1105WR T/R

• Configuration: Single Dual Gate
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 7 V
• Gate-source Breakdown Voltage: 7 V
• Continuous Drain Current: 0.03 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SOT-4
• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 7V
• Power Gain (typ)@vds: 38@5VdB
• Noise Figure (max): 2.5dB
• Frequency (max): 1GHz
• Package Type: CMPAK
• Pin Count: 3 +Tab
• Input Capacitance (typ)@vds: 2.2@5V@Gate 1/1.6@5V@Gate 2pF
• Output Capacitance (typ)@vds: 1.2@5VpF
• Reverse Capacitance (typ): 0.025@5VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 200mW
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BF1105WR,115

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This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
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R77/03/pp 15
Date of release: 1997 Dec 02