BF245A NXP Semiconductors, BF245A Datasheet - Page 4

• Manufacturer Part Number: BF245A
• Description: RF JFET BULK FET-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BF245A

• Configuration: Single
• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Drain Source Voltage Vds: 30 V
• Gate-source Breakdown Voltage: - 30 V
• Maximum Drain Gate Voltage: - 30 V
• Continuous Drain Current: 25 mA
• Maximum Operating Temperature: + 150 C
• Package / Case: SOT-54
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BF245A,112

NXP Semiconductors
DYNAMIC CHARACTERISTICS
Common source; T
1996 Jul 30
C
C
C
g
g
y
y
y
f
F
gfs
SYMBOL
is
os
handbook, halfpage
N-channel silicon field-effect transistors
is
rs
os
fs
rs
os
V


DS

I GSS
(nA)
−10
−10
−10
Fig.2
= 0; V
−10
−1
−2
−3
−1
0
GS
= 20 V.
Gate leakage current as a function of
junction temperature; typical values.
input capacitance
reverse transfer capacitance
output capacitance
input conductance
output conductance
forward transfer admittance
reverse transfer admittance
output admittance
cut-off frequency
noise figure
amb
PARAMETER
= 25 C; unless otherwise specified.
50
typ
100
T j (°C)
MGE785
V
V
V
V
V
V
V
V
V
V
value at 1 kHz
V
R
input tuned to minimum noise
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
G
150
= 1 k (common source);
= 20 V; V
= 20 V; V
= 20 V; V
= 15 V; V
= 15 V; V
= 15 V; V
= 15 V; V
= 15 V; V
= 15 V; V
= 15 V; V
= 15 V; V
CONDITIONS
4
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
= 1 V; f = 1 MHz
= 1 V; f = 1 MHz
= 1 V; f = 1 MHz
= 0; f = 200 MHz
= 0; f = 200 MHz
= 0; f = 1 kHz
= 0; f = 200 MHz
= 0; f = 200 MHz
= 0; f = 1 kHz
= 0; g
= 0; f = 100 MHz;
handbook, halfpage
V
DS
= 15 V; T
Fig.3
(mA)
fs
I D
= 0.7 of its
6
5
4
3
2
1
0
−4
j
BF245A; BF245B; BF245C
= 25 C.
Transfer characteristics for BF245A;
typical values.





3





MIN.
−2
4
1.1
1.6
250
40

6
1.4
25
700
1.5
TYP. MAX.
Product specification
V GS (V)





6.5





MGE789
pF
pF
pF
S
S
mS
mS
mS
S
MHz
dB
0
UNIT