BF245A NXP Semiconductors, BF245A Datasheet - Page 7

• Manufacturer Part Number: BF245A
• Description: RF JFET BULK FET-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BF245A

• Configuration: Single
• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Drain Source Voltage Vds: 30 V
• Gate-source Breakdown Voltage: - 30 V
• Maximum Drain Gate Voltage: - 30 V
• Continuous Drain Current: 25 mA
• Maximum Operating Temperature: + 150 C
• Package / Case: SOT-54
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BF245A,112

NXP Semiconductors
1996 Jul 30
handbook, halfpage
Fig.14 Common-source forward transfer admittance
N-channel silicon field-effect transistors
handbook, halfpage
(μA/V)
V
V
(mA/V)
DS
DS
g is
−b fs
g fs ,
10
10
= 15 V; V
= 15 V; V
10
1
3
2
Fig.12 Input admittance; typical values.
10
10
as a function of frequency; typical values.
8
6
4
2
0
10
GS
GS
= 0; T
= 0; T
amb
amb
= 25 C.
= 25 C.
−b fs
g fs
10
2
10
2
b is
g is
f (MHz)
f (MHz)
MGE778
MGE782
10
3
10
10
1
10
10
(mA/V)
2
−1
b is
3
7
handbook, halfpage
handbook, halfpage
(μA/V)
V
V
(μA/V)
g os
Fig.13 Common source reverse admittance as a
DS
DS
b rs
Fig.15 Common-source output admittance as a
10
10
10
10
10
= 15 V; V
= 15 V; V
10
10
1
3
2
4
3
2
10
10
function of frequency; typical values.
function of frequency; typical values.
GS
GS
BF245A; BF245B; BF245C
= 0; T
= 0; T
C rs
b rs
amb
amb
= 25 C.
= 25 C.
10
10
2
2
f (MHz)
b os
g os
f (MHz)
Product specification
MGE783
MGE780
10
10
3
3
10
1
10
10
10
1
10
10
(mA/V)
(pF)
C rs
b os
−1
−2
−1
−2