STPS30L40CT STMicroelectronics, STPS30L40CT Datasheet - Page 2

• Manufacturer Part Number: STPS30L40CT
• Description: DIODE SCHOTTKY 40V 15A TO-220AB
• Manufacturer: STMicroelectronics

Specifications of STPS30L40CT

• Voltage - Forward (vf) (max) @ If: 550mV @ 15A
• Current - Reverse Leakage @ Vr: 360µA @ 40V
• Current - Average Rectified (io) (per Diode): 15A
• Voltage - Dc Reverse (vr) (max): 40V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Other names: 497-7561-5; STPS30L40CT

STATIC ELECTRICAL CHARACTERISTICS (per diode)
Pulse test : * tp = 380 µs, < 2%
To evaluate the conduction losses use the following equation :
P = 0.330 x I
STPS30L40CG/CT/CW
THERMAL RESISTANCES
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
2/6
12
10
When the diodes 1 and 2 are used simultaneously :
Symbol
8
6
4
2
0
Symbol
R
Tj(diode 1) = P(diode1) x R
R
0
PF(av)(W)
V
th (j-c)
I
th (c)
R
F
*
*
2
= 0.05
Junction to case
4
Reverse leakage cur-
rent
Forward voltage drop
F(AV)
6
Parameter
+ 0.011 I
= 0.1
8
IF(av)A
= 0.2
10
F
2
(RMS)
th(j-c)
12
= 0.5
(Per diode) + P(diode 2) x R
14
Tj = 25°C
Tj = 100°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Parameter
=tp/T
16
T
= 1
18
Tests Conditions
tp
20
V
I
I
I
I
Fig.
temperature ( =0.5) (per diode).
18
16
14
12
10
F
F
F
F
8
6
4
2
0
R
= 15 A
= 15 A
= 30 A
= 30 A
0
IF(av)(A)
= V
=tp/T
RRM
2:
th(c)
Rth(j-a)=15°C/W
Per diode
25
Coupling
T
Average
Total
tp
50
Min.
Tamb(°C)
current
75
Typ.
Rth(j-a)=Rth(j-c)
0.42
0.59
20
Value
1.60
0.85
0.10
100
versus
Max.
0.55
0.50
0.74
0.67
360
50
125
ambient
°C/W
°C/W
Unit
Unit
mA
µA
V
150