STPS30L40CT STMicroelectronics, STPS30L40CT Datasheet - Page 3

• Manufacturer Part Number: STPS30L40CT
• Description: DIODE SCHOTTKY 40V 15A TO-220AB
• Manufacturer: STMicroelectronics

Specifications of STPS30L40CT

• Voltage - Forward (vf) (max) @ If: 550mV @ 15A
• Current - Reverse Leakage @ Vr: 360µA @ 40V
• Current - Average Rectified (io) (per Diode): 15A
• Voltage - Dc Reverse (vr) (max): 40V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Other names: 497-7561-5; STPS30L40CT

Fig. 3: Normalized avalanche power derating
versus pulse duration.
0.001
Fig. 5: Non repetitive surge peak forward current
versus overload duration (maximum values) (per
diode).
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values) (per diode).
200
180
160
140
120
100
2E+2
1E+2
1E+1
1E+0
1E-1
1E-2
0.01
80
60
40
20
0.1
1E-3
0
0.01
1
P
IM(A)
0
P
ARM
I
M
IR(mA)
ARM p
(1µs)
(t )
=0.5
5
t
0.1
10
1E-2
Tj=100°C
Tj=150°C
Tj=75°C
Tj=25°C
15
1
t (µs)
t(s)
p
20
VR(V)
10
1E-1
25
30
100
Tc=125°C
Tc=25°C
Tc=75°C
35
1E+0
1000
40
Fig. 4: Normalized avalanche power derating
versus junction temperature.
1.2
0.8
0.6
0.4
0.2
Fig. 6: Relative variation of thermal transient
impedance junction to case versus pulse duration.
1.0
0.8
0.6
0.4
0.2
0.0
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values) (per diode).
2000
1000
1.0E-4
500
200
100
1
0
0
P
Zth(j-c)/Rth(j-c)
P
ARM
1
= 0.5
= 0.2
= 0.1
C(pF)
ARM p
(25°C)
(t )
25
Single pulse
1.0E-3
2
50
VR(V)
5
1.0E-2
T (°C)
STPS30L40CG/CT/CW
tp(s)
j
75
10
100
1.0E-1
=tp/T
20
125
T
F=1MHz
Tj=25°C
tp
1.0E+0
150
3/6
50