BAV23S,215 NXP Semiconductors, BAV23S,215 Datasheet - Page 4

• Manufacturer Part Number: BAV23S,215
• Description: DIODE SW DBL 200V 225MA HS SOT23
• Manufacturer: NXP Semiconductors

Specifications of BAV23S,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Voltage - Forward (vf) (max) @ If: 1V @ 100mA
• Current - Reverse Leakage @ Vr: 100nA @ 200V
• Current - Average Rectified (io) (per Diode): 225mA (DC)
• Voltage - Dc Reverse (vr) (max): 200V
• Reverse Recovery Time (trr): 50ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Series Connection
• Mounting Type: Surface Mount
• Product: Switching Diodes
• Peak Reverse Voltage: 250 V
• Forward Continuous Current: 0.225 A
• Max Surge Current: 9 A
• Configuration: Dual Series
• Recovery Time: 50 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 100 uA
• Operating Temperature Range: + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1621-2; 933947770215; BAV23S T/R

NXP Semiconductors
6. Thermal characteristics
7. Characteristics
BAV23_SER_7
Product data sheet
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
[4]
Table 7.
[1]
Table 8.
T
[1]
Symbol
Per device
P
T
Symbol
Symbol
I
t
T
T
Per device
R
R
Per diode
V
C
R
rr
amb
j
amb
stg
tot
F
th(j-a)
th(j-sp)
d
Single diode loaded.
Double diode loaded.
T
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
When switched from I
= 25
j
= 25 C prior to surge.

C unless otherwise specified.
Parameter
forward voltage
reverse current
diode capacitance
reverse recovery time
Limiting values
Thermal characteristics
Characteristics
Parameter
total power dissipation
junction temperature
ambient temperature
storage temperature
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
All information provided in this document is subject to legal disclaimers.
F
Rev. 07 — 19 March 2010
= 10 mA to I
…continued
R
= 10 mA; R
I
V
f = 1 MHz; V
Conditions
I
V
F
F
R
R
= 100 mA
= 200 mA
= 200 V
= 200 V; T
Conditions
T
Conditions
in free air
amb
L
= 100 ; measured at I
 25 C
R
j
= 0 V
= 150 C
Dual high-voltage switching diodes
[4]
[1]
[1]
BAV23 series
Min
-
-
65
65
Min
-
-
Min
-
-
-
-
-
-
R
= 1 mA.
Typ
-
-
Typ
-
-
-
-
-
-
© NXP B.V. 2010. All rights reserved.
Max
250
150
+150
+150
Max
500
360
Max
1.0
1.25
100
100
2
50
Unit
mW
C
C
C
Unit
K/W
K/W
Unit
V
V
nA
A
pF
ns
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