BAR43CFILM STMicroelectronics, BAR43CFILM Datasheet - Page 2

• Manufacturer Part Number: BAR43CFILM
• Description: DIODE SCHOTTKY 30V 100MA SOT-23
• Manufacturer: STMicroelectronics

Specifications of BAR43CFILM

• Voltage - Forward (vf) (max) @ If: 1V @ 100mA
• Current - Reverse Leakage @ Vr: 500nA @ 30V
• Current - Average Rectified (io) (per Diode): 100mA
• Voltage - Dc Reverse (vr) (max): 30V
• Reverse Recovery Time (trr): 5ns
• Diode Type: Schottky
• Speed: Small Signal =< 200mA (Io), Any Speed
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3
• Product: Schottky Diodes
• Peak Reverse Voltage: 30 V
• Forward Continuous Current: 0.1 A
• Max Surge Current: 0.75 A
• Configuration: Dual Common Cathode
• Recovery Time: 5 ns
• Forward Voltage Drop: 1 V
• Maximum Reverse Leakage Current: 0.5 uA
• Operating Temperature Range: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2520-2

BAR42FILM / BAR43FILM
Table 4: Thermal Resistance
Table 5: Static Electrical Characteristics
Pulse test:
Table 6: Dynamic Characteristics (T
Figure 1: Forward voltage drop versus forward
current (typical values, low level)
2/5
(*) Mounted on epoxy board with recommended pad layout.
Symbol
Symbol
Symbol
0.00E+0
2.00E-2
1.80E-2
1.60E-2
1.40E-2
1.20E-2
1.00E-2
8.00E-3
6.00E-3
4.00E-3
2.00E-3
R
V
V
I
th(j-a)
R
F
t
C
η
BR
rr
**
*
0.00
I
FM
(A)
0.05
Junction to ambient (*)
Breakdown voltage
Reverse leakage current
Forward voltage drop
Junction capacitance
Reverse recovery time
Detection efficiency
* tp = 5 ms,
** tp = 380 µs,
0.10
Parameter
Parameter
0.15
δ
T =50°C
j
0.20
< 2%
δ
< 2%
T =100°C
0.25
j
0.30
V
0.35
FM
T
I
T
C
T
F
j
j
j
L
T =25°C
(V)
= 10 mA I
T
T
T
T
= 25°C
= 25°C
= 25°C
j
0.40
j
= 300 pF F = 45 MHz
Parameter
j
j
j
j
= 25°C)
= 25°C
= 25°C
= 100°C
= 25°C
0.45
Tests conditions
0.50
Tests conditions
V
I
V
rr
R
R
i
= 1 mA
BAR42
BAR43
ALL
= 2 V
= 1V
= 10 mA
Figure 2: Forward voltage drop versus forward
current (typical values, high level)
1E-2
1E-3
5E-1
1E-1
R
F = 1 MHz
0.0
L
I
R
FM
= 50 Ω
L
I
V
I
I
I
I
I
(A)
R
F
F
F
F
F
0.1
= 100 Ω
R
T =50°C
= 10mA
= 50mA
= 2mA
= 15mA
= 100mA
= 100µA
j
= V
0.2
T =100°C
RRM
j
0.3
0.4
Min.
T =25°C
Min.
80
0.26
j
30
V
0.5
FM
Value
(V)
500
0.6
Typ.
0.35
0.50
7
Typ
0.7
Max.
0.8
5
Max.
0.40
0.65
0.33
0.45
500
100
1
0.9
°C/W
Unit
1.0
Unit
pF
ns
Unit
%
nA
µA
V
V
1.1