STTH1003SG-TR STMicroelectronics, STTH1003SG-TR Datasheet - Page 2

• Manufacturer Part Number: STTH1003SG-TR
• Description: DIODE HI EFF 300V 10A D2PAK
• Manufacturer: STMicroelectronics

Specifications of STTH1003SG-TR

• Voltage - Forward (vf) (max) @ If: 1.3V @ 10A
• Current - Reverse Leakage @ Vr: 10µA @ 300V
• Current - Average Rectified (io) (per Diode): 10A
• Voltage - Dc Reverse (vr) (max): 300V
• Reverse Recovery Time (trr): 35ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Characteristics
1
Table 2.
Table 3.
Table 4.
1. Pulse test: t
2. Pulse test: t
2/9
Symbol
Symbol
Symbol
I
R
V
F(RMS)
I
V
I
I
F(AV)
I
T
RSM
FSM
th(j-c)
R
RRM
F
T
stg
(1)
(2)
j
Repetitive peak reverse voltage
Forward rms current
Average forward current
Surge non repetitive forward current
Non repetitive avalanche current
Storage temperature range
Maximum operating junction temperature
Junction to case
Reverse leakage current
Forward voltage drop
Static electrical characteristics
p
p
Characteristics
Absolute ratings (limiting values)
Thermal resistance
To evaluate the conduction losses use the following equation:
P = 0.86 x I
= 5 ms, δ < 2 %
= 380 µs, δ < 2 %
Parameter
Parameter
F(AV)
+ 0.024 I
F
2
(RMS))
Parameter
Doc ID 11604 Rev 2
DPAK, D
TO-220FPAB
T
T
T
T
j
j
j
j
= 25 °C
= 125 °C
= 25 °C
= 125 °C
Test conditions
2
PAK
Package
V
I
F
R
= 10 A
= V
T
t
t
p
p
c
= 10 ms sinusoidal
= 20 µs square
= 150 °C δ = 0.5
RRM
Min.
-
-
-
-
Value
-65 to + 175
Typ
4
6
0.9
10
-
-
Value
300
100
175
20
10
4
Max.
1.30
100
1.1
STTH1003S
10
°C/W
Unit
Unit
Unit
°C
°C
V
A
A
A
A
µA
V