STTH1003SG-TR STMicroelectronics, STTH1003SG-TR Datasheet - Page 4

• Manufacturer Part Number: STTH1003SG-TR
• Description: DIODE HI EFF 300V 10A D2PAK
• Manufacturer: STMicroelectronics

Specifications of STTH1003SG-TR

• Voltage - Forward (vf) (max) @ If: 1.3V @ 10A
• Current - Reverse Leakage @ Vr: 10µA @ 300V
• Current - Average Rectified (io) (per Diode): 10A
• Voltage - Dc Reverse (vr) (max): 300V
• Reverse Recovery Time (trr): 35ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Characteristics
Figure 7.
4/9
Figure 5.
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
25
Forward recovery time versus dI
Relative variations of dynamic
parameters versus junction
temperature (reference: Tj = 125 °C)
I
RM
50
S factor
T (°C)
j
75
300
250
200
150
100
50
0
0
t (ns)
fr
50
100
100
150
Doc ID 11604 Rev 2
F
200
/dt (90% confidence)
dI /dt(A/µs)
125
F
250
Figure 6.
8
7
6
5
4
3
2
1
0
0
V
FP
I =I
T =125°C
300
F
j
(V)
F(AV)
50
350
100
Transient peak forward voltage
versus dI
400
150
V =1.1 x V max.
FR
T =125°C
I =I
F
j
450
F(AV)
200
F
dI /dt(A/µs)
F
500
/dt (90% confidence)
F
250
300
350
STTH1003S
400
450
500