STTH30R03CG STMicroelectronics, STTH30R03CG Datasheet

DIODE SECONDARY 300V 15A D2PAK

STTH30R03CG

Manufacturer Part Number
STTH30R03CG
Description
DIODE SECONDARY 300V 15A D2PAK
Manufacturer
STMicroelectronics
Datasheet

Specifications of STTH30R03CG

Voltage - Forward (vf) (max) @ If
1.9V @ 15A
Current - Reverse Leakage @ Vr
20µA @ 300V
Current - Average Rectified (io) (per Diode)
15A
Voltage - Dc Reverse (vr) (max)
300V
Reverse Recovery Time (trr)
35ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Part Number:
STTH30R03CG
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0
MAJOR PRODUCT CHARACTERISTICS
FEATURES AND BENEFITS
DESCRIPTION
The TURBOSWITCH "R" is an ultra high
performance diode.
This TURBOSWITCH family, which drastically
cuts losses in associated MOSFET when run at
high dI
DC/DC converters.
July 2002 - Ed: 1C
ABSOLUTE RATINGS (limiting values, per diode)
Symbol
I
Designed for high frequency applications.
Hyperfast recovery competes with GaAs devices.
Allows size decrease of snubbers and heatsinks.
V
F(RMS)
I
I
F(AV)
T
FSM
RRM
Tj
stg
F
I
V
trr (max)
/dt, is suited for HF OFF-Line SMPS and
Tj (max)
RM
F
V
I
F(AV)
(max)
®
RRM
(typ.)
Repetitive peak reverse voltage
RMS forward current
Average forward current
Surge non repetitive forward current
Storage temperature range
Maximum operating junction temperature
HIGH FREQUENCY SECONDARY RECTIFIER
2 x 15 A
175 °C
300 V
35 ns
1.4 V
4.5A
Parameter
Tc = 120°C
tp = 10 ms sinusoidal
= 0.5
STTH30R03CW/CG
Per diode
Per device
STTH30R03CW
STTH30R03CG
K
TO-247
D
2
PAK
A1
- 65 + 175
A1
A2
Value
+ 175
K
300
120
30
15
30
A2
Unit
°C
°C
V
A
A
A
1/6

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STTH30R03CG Summary of contents

Page 1

... Surge non repetitive forward current FSM T Storage temperature range stg Tj Maximum operating junction temperature July 2002 - Ed 300 V 4.5A 175 °C 1 Parameter Tc = 120° sinusoidal STTH30R03CW/ TO-247 STTH30R03CW PAK STTH30R03CG Value 300 30 15 Per diode 30 Per device 120 - 65 + 175 + 175 Unit °C °C 1/6 ...

Page 2

STTH30R03CW/CG THERMAL AND POWER DATA Symbol R Junction to case th (j- (c) STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter I * Reverse leakage R current V ** Forward voltage drop F Pulse test : * ms, ...

Page 3

Fig. 1: Conduction losses versus average current P( 0.1 = 0 IF(av) ( Fig. 3: Relative variation of thermal impedance junction to case ...

Page 4

STTH30R03CW/CG Fig. 7: Softness factor (tb/ta) versus dIF/dt (typical values). S factor 0.6 0.5 0.4 0.3 0.2 0.1 dIF/dt(A/µs) 0 100 150 200 250 300 350 400 450 500 Fig. 9: Transient peak forward voltage versus dI /dt ...

Page 5

PACKAGE MECHANICAL DATA 2 D PAK FLAT ZONE NO LESS THAN 2mm FOOTPRINT 16.90 10.30 8.90 A REF ...

Page 6

... Marking STTH30R03CW STTH30R03CW STTH30R03CG STTH30R03CG STTH30R03CG-TR STTH30R03CG Cooling method: by conduction (C) Recommended torque value: 0.8 N.m. Maximum torque value: 1 N.m. Epoxy meets UL 94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics ...

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