STTH30R03CG STMicroelectronics, STTH30R03CG Datasheet - Page 3

• Manufacturer Part Number: STTH30R03CG
• Description: DIODE SECONDARY 300V 15A D2PAK
• Manufacturer: STMicroelectronics

Specifications of STTH30R03CG

• Voltage - Forward (vf) (max) @ If: 1.9V @ 15A
• Current - Reverse Leakage @ Vr: 20µA @ 300V
• Current - Average Rectified (io) (per Diode): 15A
• Voltage - Dc Reverse (vr) (max): 300V
• Reverse Recovery Time (trr): 35ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Fig. 1: Conduction losses versus average current
30
25
20
15
10
Fig. 3: Relative variation of thermal impedance
junction to case versus pulse duration.
Fig. 5:
(90% confidence).
1.0
0.8
0.6
0.4
0.2
0.0
80
70
60
50
40
30
20
10
5
0
0
1E-3
0
0
P(W)
trr(ns)
Zth(j-c)/Rth(j-c)
Single pulse
= 0.5
= 0.2
= 0.1
50
2
Reverse recovery time versus dI
100 150 200 250 300 350 400 450 500
4
IF=2 x IF(av)
= 0.05
6
1E-2
IF=0.5 x IF(av)
= 0.1
dIF/dt(A/µs)
8
IF(av) (A)
tp(s)
= 0.2
10
IF=IF(av)
12
1E-1
= 0.5
14
=tp/T
16
=tp/T
VR=200V
Tj=125°C
T
T
18
= 1
tp
1E+0
tp
F
/dt
20
Fig. 2: Forward voltage drop versus forward
current
200
100
Fig. 4:
dI
12
10
Fig. 6: Reverse recovery charges versus dIF/dt
(90% confidence).
150
125
100
10
8
6
4
2
0
75
50
25
F
1
0
0
IRM(A)
/dt (90% confidence).
0
0
Qrr(nC)
IFM(A)
VR=200V
Tj=125°C
VR=200V
Tj=125°C
50
50 100 150 200 250 300 350 400 450 500
1
Typical values
Peak reverse recovery current versus
Tj=125°C
100 150 200 250 300 350 400 450 500
1
Maximum values
Tj=125°C
2
dIF/dt(A/µs)
dIF/dt(A/µs)
VFM(V)
2
IF=IF(av)
STTH30R03CW/CG
Maximum values
IF= 2 x IF(av)
3
IF=2 x IF(av)
Tj=25°C
IF= 0.5 x IF(av)
IF=IF(av)
3
IF=0.5 x IF(av)
4
3/6
4