BYW99P-200 STMicroelectronics, BYW99P-200 Datasheet

DIODE FAST REC 200V 15A SOT-93

BYW99P-200

Manufacturer Part Number
BYW99P-200
Description
DIODE FAST REC 200V 15A SOT-93
Manufacturer
STMicroelectronics
Datasheet

Specifications of BYW99P-200

Voltage - Forward (vf) (max) @ If
850mV @ 12A
Current - Reverse Leakage @ Vr
20µA @ 200V
Current - Average Rectified (io) (per Diode)
15A
Voltage - Dc Reverse (vr) (max)
200V
Reverse Recovery Time (trr)
40ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole, Radial
Package / Case
SOT-93-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-2691-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BYW99P-200
Manufacturer:
ST
Quantity:
45 999
Part Number:
BYW99P-200
Manufacturer:
STMRC
Quantity:
312
Part Number:
BYW99P-200
Manufacturer:
ST
0
DESCRIPTION
FEATURES
ABSOLUTE MAXIMUM RATINGS
October 1999
Dual center tap rectifier suited for switchmode
power supply and high frequency DC to DC
converters.
Packaged in SOT93, TOP3I or TO247 this device
is intended for use in low voltage, high frequency
inverters, free wheeling and polarity protection
applications.
SUITED FOR SMPS
VERY LOW FORWARD LOSSES
NEGLIGIBLE SWITCHING LOSSES
HIGH SURGE CURRENT CAPABILITY
HIGH AVALANCHE ENERGY CAPABILITY
INSULATED VERSION TOP3I :
Insulating voltage = 2500 V DC
Capacitance = 12 pF
Symbol
Symbol
I
F(RMS)
V
I
Tstg
I
F(AV)
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
FSM
RRM
Tj
®
RMS forward current
Average forward current
Surge non repetitive forward current
Storage and junction temperature range
Repetitive peak reverse voltage
Ed : 2A
= 0.5
SOT93 / TO247
TOP3I
Parameter
Parameter
A1
A2
Tc=120 C
Tc=115 C
tp=10ms
sinusoidal
BYW99P-200
(Plastic)
SOT93
Per diode
Per diode
Per diode
Per diode
K
BYW99P/PI/W
- 40 to + 150
- 40 to + 150
BYW99PI-200
BYW99W-200
Value
Value
200
200
35
15
15
isolated
(Plastic)
(Plastic)
TOP3I
TO247
A1
K
Unit
Unit
A
A
A
V
A2
C
C
1/6

Related parts for BYW99P-200

BYW99P-200 Summary of contents

Page 1

... FSM Surge non repetitive forward current Tstg Storage and junction temperature range Tj Symbol V Repetitive peak reverse voltage RRM October 1999 SOT93 (Plastic) BYW99P-200 Parameter Per diode SOT93 / TO247 Tc=120 C Per diode TOP3I Tc=115 C Per diode tp=10ms Per diode sinusoidal Parameter BYW99P/PI/W K ...

Page 2

... BYW99P/PI/W THERMAL RESISTANCES Symbol Rth (j-c) Junction to case Rth (c) Coupling When the diodes 1 and 2 are used simultaneously : Tj-Tc (diode 1) = P(diode STATIC ELECTRICAL CHARACTERISTICS (Per diode) Symbol 100 125 125 Pulse test : * ms, < 380 s, < evaluate the conduction losses use the following equation : ...

Page 3

... I M(A) 160 150 140 130 120 110 100 90 o Tc= Tc= Tc=120 0.1 1 0.001 BYW99P/PI/W P=10W P=20W P=30W 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Zth(j-c) (tp. ) Rth(j- Single pulse tp(s) 1.0E-02 1.0E- t(s) =0.5 0.01 0 =tp =tp/T tp 1.0E+00 ...

Page 4

... BYW99P/PI/W Fig.7 : Average current temperature 0.5) (SOT93, TO247) I F(av)( Rth(j-a)=Rth(j- Rth(j-a)= =tp/T tp Tamb 100 Fig.9 : Junction capacitance versus reverse voltage applied (Typical values). C(pF F=1Mhz Tj= VR( Fig.11 : Peak reverse current versus dIF/dt. IRM(A) 3.0 90%CONFIDENCE IF=IF(av) 2.5 2.0 1.5 1 ...

Page 5

... Cooling method : C Weight : 5.3 g Recommended torque value : 0.8m.N Maximum torque value : 1.0m.N PACKAGE MECHANICAL DATA TOP3I (isolated) Marking : Type number Cooling method : C Weight : 4.7 g Recommended torque value : 0.8m.N Maximum torque value : 1.0m.N BYW99P/PI/W DIMENSIONS REF. Millimeters Inches Min. Max. Min. A 4.70 4.90 1 ...

Page 6

... BYW99P/PI/W PACKAGE MECHANICAL DATA TO247 F(x3 Marking : Type number Cooling method : C Weight : 4.4 g Recommended torque value : 0.8m.N Maximum torque value : 1.0m.N Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics ...

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