BYW99P-200 STMicroelectronics, BYW99P-200 Datasheet - Page 3

• Manufacturer Part Number: BYW99P-200
• Description: DIODE FAST REC 200V 15A SOT-93
• Manufacturer: STMicroelectronics

Specifications of BYW99P-200

• Voltage - Forward (vf) (max) @ If: 850mV @ 12A
• Current - Reverse Leakage @ Vr: 20µA @ 200V
• Current - Average Rectified (io) (per Diode): 15A
• Voltage - Dc Reverse (vr) (max): 200V
• Reverse Recovery Time (trr): 40ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole, Radial
• Package / Case: SOT-93-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2691-5

Fig.1 : Average forward power dissipation versus
average forward current.
17.5
12.5
Fig.3 : Forward voltage drop versus forward
current (maximum values).
Fig.5 : Non repetitive surge peak forward current
versus overload duration.
(SOT93, TO247)
160
150
140
130
120
110
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
7.5
2.5
90
80
70
60
50
40
30
20
10
0.001
20
15
10
0
5
0
0.1
0
I M(A)
P F(av)(W)
VFM(V)
Tj=125 C
IM
2.5
o
t
=0.5
=0.05
5
1
0.01
7.5
I F(av)(A)
=0.1
IFM(A)
10
t(s)
=0.2
10
12.5
0.1
=0.5
15
=tp/T
Tc=120 C
17.5
Tc=75 C
Tc=25 C
100 200
T
=1
o
tp
o
o
20
1
Fig.2 : Peak current versus form factor.
350
300
250
200
150
100
Fig.4 : Relative variation of thermal impedance
junction to case versus pulse duration.
0.5
0.2
Fig.6 : Non repetitive surge peak forward current
versus overload duration.
(TOP3I)
160
150
140
130
120
110
100
1.0
0.1
50
90
80
70
60
50
40
30
20
10
0.001
1.0E-03
0
0
K
0
K =
I M(A)
I M(A)
= 0 . 1
IM
= 0 . 2
Zth(j-c) (tp. )
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
Single pulse
= 0 . 5
Rth(j-c)
P=10W
P=20W
t
=0.5
1.0E-02
0.01
tp(s)
t(s)
P=30W
1.0E-01
0.1
BYW99P/PI/W
=tp/T
=tp/T
Tc=115 C
Tc=25 C
T
Tc=60 C
tp
T
1.0E+00
tp
o
o
o
I
M
3/6
1
1