1N4448,113 NXP Semiconductors, 1N4448,113 Datasheet - Page 4

• Manufacturer Part Number: 1N4448,113
• Description: DIODE SW HS 100V 200MA DO-35
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of 1N4448,113

• Package / Case: DO-204AH, DO-35, Axial
• Voltage - Forward (vf) (max) @ If: 1V @ 100mA
• Voltage - Dc Reverse (vr) (max): 100V
• Current - Average Rectified (io): 200mA (DC)
• Current - Reverse Leakage @ Vr: 25nA @ 20V
• Diode Type: Standard
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 4ns
• Capacitance @ Vr, F: 4pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Product: Switching Diodes
• Peak Reverse Voltage: 100 V
• Forward Continuous Current: 0.2 A
• Max Surge Current: 4 A
• Configuration: Single
• Recovery Time: 4 ns
• Forward Voltage Drop: 1 V
• Maximum Reverse Leakage Current: 0.025 uA
• Operating Temperature Range: + 200 C
• Maximum Operating Temperature: + 200 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Not applicable / Not applicable
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Not applicable / Not applicable
• Other names: 1N4448 T/R; 568-1361-2; 933120350113

NXP Semiconductors
GRAPHICAL DATA
2004 Aug 10
handbook, full pagewidth
High-speed diodes
Device mounted on an FR4 printed-circuit board; lead length 10 mm.
Fig.2
Based on square wave currents.
T
j
(mA)
I FSM
= 25 °C prior to surge.
(A)
300
I
200
100
10
F
10
10
0
−1
1
2
0
1
Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
100
10
T
amb
(°C)
mbg451
200
10
4
2
handbook, halfpage
(1) T
(2) T
(3) T
Fig.3
(mA)
I F
600
400
200
j
j
j
= 175 °C; typical values.
= 25 °C; typical values.
= 25 °C; maximum values.
0
0
Forward current as a function of forward
voltage.
10
3
(1)
1
1N4148; 1N4448
(2)
t p (µs)
V F (V)
Product data sheet
(3)
MBG704
MBG464
10
2
4