PMEG4010ET,215 NXP Semiconductors, PMEG4010ET,215 Datasheet - Page 5

• Manufacturer Part Number: PMEG4010ET,215
• Description: SCHOTTKY RECT 40V 1A SOT-23
• Manufacturer: NXP Semiconductors

Specifications of PMEG4010ET,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Voltage - Forward (vf) (max) @ If: 640mV @ 1A
• Voltage - Dc Reverse (vr) (max): 40V
• Current - Average Rectified (io): 1A (DC)
• Current - Reverse Leakage @ Vr: 100µA @ 40V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Capacitance @ Vr, F: 50pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Product: Schottky Diodes
• Peak Reverse Voltage: 40 V
• Forward Continuous Current: 1 A
• Max Surge Current: 9 A
• Configuration: Single
• Forward Voltage Drop: 0.64 V
• Maximum Reverse Leakage Current: 100 uA
• Maximum Power Dissipation: 420 mW
• Operating Temperature Range: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-4103-2; 934061051215; PMEG4010ET T/R

NXP Semiconductors
PMEG4010EH_EJ_ET_4
Product data sheet
Fig 1. Forward current as a function of forward
Fig 3. Diode capacitance as a function of reverse voltage; typical values
(mA)
(1) T
(2) T
(3) T
(4) T
(5) T
I
10
10
F
10
10
10
1
3
2
1
2
voltage; typical values
f = 1 MHz; T
0
amb
amb
amb
amb
amb
(1)
= 150 C
= 125 C
= 85 C
= 25 C
= 40 C
0.1
(2)
amb
(3)
0.2
= 25 C
(4)
0.3
(5)
(pF)
0.4
C
100
d
80
60
40
20
0
0
0.5
006aaa253
V
F
(V)
0.6
Rev. 04 — 21 March 2007
10
20
Fig 2. Reverse current as a function of reverse
( A)
I
1 A very low V
R
(1) T
(2) T
(3) T
(4) T
(5) T
10
10
10
10
10
10
10
10
1
30
5
4
3
2
1
2
3
voltage; typical values
0
amb
amb
amb
amb
amb
006aaa255
V
R
PMEG4010EH/EJ/ET
= 150 C
= 125 C
= 85 C
= 25 C
= 40 C
(V)
40
10
F
(1)
(2)
(3)
(4)
(5)
MEGA Schottky barrier rectifiers
20
30
© NXP B.V. 2007. All rights reserved.
006aaa254
V
R
(V)
40
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