PMEG1030EJ,115 NXP Semiconductors, PMEG1030EJ,115 Datasheet

SCHOTTKY RECT 10V 3A SOD323F

PMEG1030EJ,115

Manufacturer Part Number
PMEG1030EJ,115
Description
SCHOTTKY RECT 10V 3A SOD323F
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PMEG1030EJ,115

Package / Case
SC-90, SOD-323F
Voltage - Forward (vf) (max) @ If
530mV @ 3A
Voltage - Dc Reverse (vr) (max)
10V
Current - Average Rectified (io)
3A (DC)
Current - Reverse Leakage @ Vr
3mA @ 10V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F
85pF @ 1V, 1MHz
Mounting Type
Surface Mount
Product
Schottky Diodes
Peak Reverse Voltage
10 V
Forward Continuous Current
3 A
Max Surge Current
9 A
Configuration
Single
Forward Voltage Drop
0.53 V
Maximum Reverse Leakage Current
3000 uA
Operating Temperature Range
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-4108-2
934058649115
PMEG1030EJ T/R
PMEG1030EJ T/R
1. Product profile
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an
integrated guard ring for stress protection encapsulated in small SMD plastic packages.
Table 1.
Table 2.
[1]
Type number
PMEG1030EH
PMEG1030EJ
Symbol
I
V
V
F
R
F
PMEG1030EH; PMEG1030EJ
10 V, 3 A ultra low V
Rev. 04 — 15 January 2010
Forward current: 3 A
Reverse voltage: 10 V
Ultra low forward voltage
Small and flat lead SMD package
Low voltage rectification
High efficiency DC-to-DC conversion
Switched-mode power supply
Inverse polarity protection
Low power consumption applications
Pulse test: t
Product overview
Quick reference data
Parameter
forward current
reverse voltage
forward voltage
p
≤ 300 μs; δ ≤ 0.02.
Package
NXP
SOD123F
SOD323F
F
Conditions
T
I
F
MEGA Schottky barrier rectifiers
sp
= 3 A
≤ 55 °C
JEITA
-
SC-90
[1]
Min
-
-
-
Configuration
single isolated diodes
single isolated diodes
Typ
-
-
390
Product data sheet
Max
3
10
530
Unit
A
V
mV

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PMEG1030EJ,115 Summary of contents

Page 1

PMEG1030EH; PMEG1030EJ ultra low V Rev. 04 — 15 January 2010 1. Product profile 1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an integrated guard ring for stress protection encapsulated in ...

Page 2

... NXP Semiconductors 2. Pinning information Table 3. Pin 1 2 [1] The marking bar indicates the cathode. 3. Ordering information Table 4. Type number PMEG1030EH PMEG1030EJ 4. Marking Table 5. Type number PMEG1030EH PMEG1030EJ PMEG1030EH_EJ_4 Product data sheet PMEG1030EH; PMEG1030EJ ultra low V Pinning Description cathode anode Ordering information Package ...

Page 3

... NXP Semiconductors 5. Limiting values Table 6. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter V reverse voltage R I forward current F I repetitive peak forward FRM current I non-repetitive peak forward FSM current P total power dissipation tot T junction temperature j T ambient temperature ...

Page 4

... NXP Semiconductors 7. Characteristics Table 8. ° amb Symbol [1] Pulse test ( (1) (2) (3) ( − 0.1 0.2 0.3 = 125 °C (1) T amb = 85 °C (2) T amb = 25 °C (3) T amb = −40 °C (4) T amb Fig 1. Forward current as a function of forward voltage; typical values PMEG1030EH_EJ_4 Product data sheet PMEG1030EH ...

Page 5

... NXP Semiconductors = 25 ° MHz T amb Fig 3. Diode capacitance as a function of reverse voltage; typical values 8. Package outline 1.7 1.5 1 3.6 2.7 3.4 2.5 2 0.70 0.55 Dimensions in mm Fig 4. Package outline SOD123F 9. Packing information Table 9. Packing methods The -xxx numbers are the last three digits of the 12NC ordering code. ...

Page 6

... NXP Semiconductors 10. Soldering 2.1 Reflow soldering is the only recommended soldering method. Dimensions in mm Fig 6. Reflow soldering footprint SOD123F Reflow soldering is the only recommended soldering method. Dimensions in mm Fig 7. Reflow soldering footprint SOD323F (SC-90) PMEG1030EH_EJ_4 Product data sheet PMEG1030EH; PMEG1030EJ ultra low V 4 ...

Page 7

... Revision history Table 10. Revision history Document ID Release date PMEG1030EH_EJ_4 20100115 • Modifications: This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. PMEG1030EH_EJ_3 20050602 PMEG1030EH_EJ_2 20050405 PMEG1030EJ_1 20050124 ...

Page 8

... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 9

... NXP Semiconductors 14. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . 3 7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 5 9 Packing information . . . . . . . . . . . . . . . . . . . . . 5 10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 7 12 Legal information ...

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