PMEG1030EJ,115 NXP Semiconductors, PMEG1030EJ,115 Datasheet - Page 4

• Manufacturer Part Number: PMEG1030EJ,115
• Description: SCHOTTKY RECT 10V 3A SOD323F
• Manufacturer: NXP Semiconductors

Specifications of PMEG1030EJ,115

• Package / Case: SC-90, SOD-323F
• Voltage - Forward (vf) (max) @ If: 530mV @ 3A
• Voltage - Dc Reverse (vr) (max): 10V
• Current - Average Rectified (io): 3A (DC)
• Current - Reverse Leakage @ Vr: 3mA @ 10V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Capacitance @ Vr, F: 85pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Product: Schottky Diodes
• Peak Reverse Voltage: 10 V
• Forward Continuous Current: 3 A
• Max Surge Current: 9 A
• Configuration: Single
• Forward Voltage Drop: 0.53 V
• Maximum Reverse Leakage Current: 3000 uA
• Operating Temperature Range: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-4108-2; 934058649115; PMEG1030EJ T/R; PMEG1030EJ T/R

NXP Semiconductors
7. Characteristics
PMEG1030EH_EJ_4
Product data sheet
Fig 1.
(mA )
I
10
(1) T
(2) T
(3) T
(4) T
F
10
10
10
10
−1
4
3
2
1
0
Forward current as a function of forward
voltage; typical values
amb
amb
amb
amb
(1)
= 125 °C
= 85 °C
= 25 °C
= −40 °C
0.1
(2)
Table 8.
T
[1]
Symbol
V
I
C
0.2
R
amb
(3)
F
d
Pulse test: t
= 25
(4)
0.3
°
C unless otherwise specified.
Parameter
forward voltage
reverse current
diode capacitance
Characteristics
p
≤ 300 μs; δ ≤ 0.02.
0.4
006aaa290
V
F
(V)
Rev. 04 — 15 January 2010
0.5
PMEG1030EH; PMEG1030EJ
Conditions
I
I
I
I
V
V
V
V
F
F
F
F
R
R
R
R
10 V, 3 A ultra low V
= 0.01 A
= 0.1 A
= 1 A
= 3 A
= 5 V
= 8 V
= 10 V
= 1 V; f = 1 MHz
Fig 2.
(μA)
I
(1) T
(2) T
(3) T
(4) T
R
10
10
10
10
10
10
1
6
5
4
3
2
0
Reverse current as a function of reverse
voltage; typical values
amb
amb
amb
amb
= 125 °C
= 85 °C
= 25 °C
= −40 °C
2
F
[1]
MEGA Schottky barrier rectifiers
(1)
(2)
(3)
(4)
-
Min
-
-
-
-
-
-
-
4
6
Typ
100
170
280
390
0.55
0.8
1
70
© NXP B.V. 2010. All rights reserved.
8
006aaa291
V
Max
130
200
350
530
2
2.5
3
85
R
(V)
10
Unit
mV
mV
mV
mV
mA
mA
mA
pF
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