BAS516,115 NXP Semiconductors, BAS516,115 Datasheet - Page 7

• Manufacturer Part Number: BAS516,115
• Description: DIODE SW 75V 250MA HS SOD523
• Manufacturer: NXP Semiconductors

Specifications of BAS516,115

• Package / Case: SC-79, SOD-523
• Voltage - Forward (vf) (max) @ If: 1.25V @ 150mA
• Voltage - Dc Reverse (vr) (max): 100V
• Current - Average Rectified (io): 250mA (DC)
• Current - Reverse Leakage @ Vr: 500nA @ 80V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 4ns
• Capacitance @ Vr, F: 1pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Product: Switching Diodes
• Peak Reverse Voltage: 85 V
• Forward Continuous Current: 0.25 A
• Max Surge Current: 4 A
• Configuration: Single
• Recovery Time: 4 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 1 uA
• Operating Temperature Range: + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Rectifier Type: Switching Diode
• Peak Rep Rev Volt: 85V
• Avg. Forward Curr (max): 0.25
• Rev Curr: 1uA
• Peak Non-repetitive Surge Current (max): 4A
• Forward Voltage: 1.25V
• Operating Temp Range: -65C to 150C
• Package Type: SOD-523
• Rev Recov Time: 4ns
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1603-2; 934055217115; BAS516 T/R

NXP Semiconductors
BAS16_SER_5
Product data sheet
Fig 1.
Fig 3.
(mA)
( A)
I
I
(1) T
(2) T
(3) T
(4) T
(1) T
(2) T
(3) T
(4) T
10
10
10
10
10
10
R
F
10
10
10
10
10
1
1
3
2
1
2
1
2
3
4
5
0
0
Forward current as a function of forward
voltage; typical values
Reverse current as a function of reverse
voltage; typical values
amb
amb
amb
amb
amb
amb
amb
amb
= 150 C
= 85 C
= 25 C
= 40 C
= 150 C
= 85 C
= 25 C
= 40 C
0.2
20
0.4
(1)
40
(2)
0.6
(3)
(1)
(2)
(3)
(4)
0.8
(4)
60
1.0
80
006aab132
006aab133
1.2
V
V
R
F
(V)
(V)
100
Rev. 05 — 25 August 2008
1.4
Fig 2.
Fig 4.
I
FSM
(A)
(pF )
10
C
10
0.8
0.6
0.4
0.2
10
d
1
0
2
1
1
Based on square wave currents.
T
Non-repetitive peak forward current as a
function of pulse duration; maximum values
f = 1 MHz; T
Diode capacitance as a function of reverse
voltage; typical values
0
j
= 25 C; prior to surge
10
4
amb
= 25 C
High-speed switching diodes
10
BAS16 series
8
2
10
12
© NXP B.V. 2008. All rights reserved.
3
t
V
p
R
( s)
mbg704
mbg446
(V)
10
16
4
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