STTH10R04G-TR STMicroelectronics, STTH10R04G-TR Datasheet - Page 3

• Manufacturer Part Number: STTH10R04G-TR
• Description: DIODE ULT FAST 400V 10A D2PAK
• Manufacturer: STMicroelectronics

Specifications of STTH10R04G-TR

• Voltage - Forward (vf) (max) @ If: 1.7V @ 10A
• Voltage - Dc Reverse (vr) (max): 400V
• Current - Average Rectified (io): 10A
• Current - Reverse Leakage @ Vr: 10µA @ 400V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 40ns
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 400 V
• Forward Voltage Drop: 1.7 V
• Recovery Time: 40 ns
• Forward Continuous Current: 10 A
• Max Surge Current: 100 A
• Reverse Current Ir: 10 uA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Details
• Other names: 497-7575-2; STTH10R04G-TR

STTH10R04
Figure 1.
Figure 3.
Figure 5.
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
18
16
14
12
10
1.E-04
8
6
4
2
0
0
I
0
P (W)
RM
Single pulse
(A)
V
T
D²PAK
DPAK
I
50
j
F
R
=125°C
=I
=200V
F(AV)
2
Conduction losses versus
average forward current
Relative variation of thermal
impedance junction to case versus
pulse duration
Peak reverse recovery current
versus dI
100
1.E-03
d=0.05
150
4
I F(av) (A)
dI /dt(A/µs)
d=0.1
200
F
F
/dt (typical values)
1.E-02
t
d=0.2
P
250
(s)
6
300
8
350
d=0.5
1.E-01
400
T
10
450
d=1
1.E+00
12
500
Figure 2.
Figure 4.
Figure 6.
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
80
70
60
50
40
30
20
10
200
180
160
140
120
100
0
1.E-03
80
60
40
20
0
0
0.0
t (ns)
I
rr
FM
TO-220FPAC
Single pulse
(A)
50
0.5
Forward voltage drop versus
forward current
Relative variation of thermal
impedance junction to case versus
pulse duration
Reverse recovery time versus
dI
100
1.0
1.E-02
F
/dt (typical values)
(Typical values)
150
1.5
T
(Maximum values)
j
=125°C
dI /dt(A/µs)
T
200
F
j
=125°C
2.0
1.E-01
t
250
P
2.5
(s)
V
FM
300
3.0
(V)
(Maximum values)
350
3.5
1.E+00
Characteristics
T
j
=25°C
400
4.0
V
T
I
j
F
R
=125°C
=I
=200V
F(AV)
4.5
450
1.E+01
5.0
500
3/11