BAS21W,115 NXP Semiconductors, BAS21W,115 Datasheet - Page 2

DIODE SW 200V 200MA HS UMT3

BAS21W,115

Manufacturer Part Number
BAS21W,115
Description
DIODE SW 200V 200MA HS UMT3
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BAS21W,115

Package / Case
SC-70-3, SOT-323-3
Voltage - Forward (vf) (max) @ If
1.25V @ 200mA
Voltage - Dc Reverse (vr) (max)
250V
Current - Average Rectified (io)
225mA (DC)
Current - Reverse Leakage @ Vr
100nA @ 200V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
50ns
Capacitance @ Vr, F
2pF @ 0V, 1MHz
Mounting Type
Surface Mount
Product
Switching Diodes
Peak Reverse Voltage
250 V
Forward Continuous Current
225 mA
Max Surge Current
625 mA
Configuration
Single
Recovery Time
50 ns
Forward Voltage Drop
1.25 V
Maximum Reverse Leakage Current
100 nA
Maximum Power Dissipation
200 mW
Operating Temperature Range
- 55 C to + 150 C
Maximum Diode Capacitance
2 pF
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934063268115
NXP Semiconductors
2. Pinning information
3. Ordering information
BAS21W_SER_1
Product data sheet
Table 3.
Table 4.
Pin
BAS21W
1
2
3
BAS21AW
1
2
3
BAS21SW
1
2
3
Type number
BAS21W
BAS21AW
BAS21SW
Pinning
Ordering information
Description
anode
not connected
cathode
cathode (diode 1)
cathode (diode 2)
common anode
anode (diode 1)
cathode (diode 2)
cathode (diode 1),
anode (diode 2)
Package
Name
SC-70
Rev. 01 — 9 October 2009
Description
plastic surface-mounted package; 3 leads
Simplified outline
1
1
1
BAS21W series
High-voltage switching diodes
3
3
3
2
2
2
Graphic symbol
© NXP B.V. 2009. All rights reserved.
1
1
1
006aaa764
Version
SOT323
3
3
3
006aab099
006aaa763
2
2
2 of 11
2

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