1PS79SB31,135 NXP Semiconductors, 1PS79SB31,135 Datasheet

DIODE SCHOTTKY 30V 200MA SC79

1PS79SB31,135

Manufacturer Part Number
1PS79SB31,135
Description
DIODE SCHOTTKY 30V 200MA SC79
Manufacturer
NXP Semiconductors
Datasheet

Specifications of 1PS79SB31,135

Package / Case
SC-79, SOD-523
Voltage - Forward (vf) (max) @ If
500mV @ 200mA
Voltage - Dc Reverse (vr) (max)
30V
Current - Average Rectified (io)
200mA (DC)
Current - Reverse Leakage @ Vr
30µA @ 10V
Diode Type
Schottky
Speed
Small Signal =< 200mA (Io), Any Speed
Capacitance @ Vr, F
25pF @ 1V, 1MHz
Mounting Type
Surface Mount
Product
Schottky Diodes
Peak Reverse Voltage
30 V
Forward Continuous Current
0.2 A
Max Surge Current
1 A
Configuration
Single
Forward Voltage Drop
0.5 V
Maximum Reverse Leakage Current
30 uA @ 10 V
Operating Temperature Range
+ 125 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
1PS79SB31 /T3
1PS79SB31 /T3
934056795135
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D319
1PS79SB31
Schottky barrier diode
Product data sheet
2002 Jan 11

Related parts for 1PS79SB31,135

1PS79SB31,135 Summary of contents

Page 1

DATA SHEET 1PS79SB31 Schottky barrier diode Product data sheet DISCRETE SEMICONDUCTORS M3D319 2002 Jan 11 ...

Page 2

... NXP Semiconductors Schottky barrier diode FEATURES • Very low forward voltage • Guard ring protected • Ultra small SMD package. APPLICATIONS • Ultra high-speed switching • Voltage clamping • Protection circuits • Low current rectification • Low power consumption applications (e.g. hand-held devices) ...

Page 3

... NXP Semiconductors Schottky barrier diode ELECTRICAL CHARACTERISTICS = 25 °C unless otherwise specified. T amb SYMBOL PARAMETER V forward voltage F I continuous reverse current R C diode capacitance d Note = 300 μs; δ = 0.02. 1. Pulse test THERMAL CHARACTERISTICS SYMBOL PARAMETER R thermal resistance from junction to th j-a ambient Note 1 ...

Page 4

... NXP Semiconductors Schottky barrier diode GRAPHICAL DATA 3 10 handbook, halfpage I F (mA (1) (2) ( 0.2 0.4 = 125 °C. (1) T amb = 85 °C. (2) T amb = 25 °C. (3) T amb Fig.2 Forward current as a function of forward voltage; typical values. 40 handbook, halfpage C d (pF °C. ( MHz; T amb Fig.4 Diode capacitance as a function of reverse voltage ...

Page 5

... NXP Semiconductors Schottky barrier diode PACKAGE OUTLINE Plastic surface mounted package; 2 leads (1) OUTLINE VERSION IEC SOD523 2002 Jan REFERENCES JEDEC JEITA SC- 0.5 scale DIMENSIONS (mm are the original dimensions) UNIT 0.34 0.17 0.65 1.25 mm 0.26 0.11 0.58 1.15 Note 1. The marking bar indicates the cathode. ...

Page 6

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 7

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www ...

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