1PS79SB31,135 NXP Semiconductors, 1PS79SB31,135 Datasheet - Page 4

• Manufacturer Part Number: 1PS79SB31,135
• Description: DIODE SCHOTTKY 30V 200MA SC79
• Manufacturer: NXP Semiconductors

Specifications of 1PS79SB31,135

• Package / Case: SC-79, SOD-523
• Voltage - Forward (vf) (max) @ If: 500mV @ 200mA
• Voltage - Dc Reverse (vr) (max): 30V
• Current - Average Rectified (io): 200mA (DC)
• Current - Reverse Leakage @ Vr: 30µA @ 10V
• Diode Type: Schottky
• Speed: Small Signal =< 200mA (Io), Any Speed
• Capacitance @ Vr, F: 25pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Product: Schottky Diodes
• Peak Reverse Voltage: 30 V
• Forward Continuous Current: 0.2 A
• Max Surge Current: 1 A
• Configuration: Single
• Forward Voltage Drop: 0.5 V
• Maximum Reverse Leakage Current: 30 uA @ 10 V
• Operating Temperature Range: + 125 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 1PS79SB31 /T3; 1PS79SB31 /T3; 934056795135

NXP Semiconductors
GRAPHICAL DATA
2002 Jan 11
handbook, halfpage
handbook, halfpage
Schottky barrier diode
(1) T
(2) T
(3) T
Fig.2
(1) f = 1 MHz; T
Fig.4
(mA)
(pF)
C d
I F
10
10
40
30
20
10
10
amb
amb
amb
0
1
3
2
0
0
= 125 °C.
= 85 °C.
= 25 °C.
Forward current as a function of forward
voltage; typical values.
Diode capacitance as a function of reverse
voltage; typical values.
(1)
amb
0.2
(2) (3)
= 25 °C.
10
0.4
0.6
20
V R (V)
0.8
V F (V)
MGU519
MGU517
30
1
4
handbook, halfpage
(1) T
(2) T
(3) T
Fig.3
(μA)
I R
10
10
10
10
10
−1
amb
amb
amb
1
4
3
2
0
= 125 °C.
= 85 °C.
= 25 °C.
Reverse current as a function of reverse
voltage; typical values.
(1)
(2)
(3)
10
20
1PS79SB31
Product data sheet
V R (V)
MGU518
30