PMEG6010ER,115 NXP Semiconductors, PMEG6010ER,115 Datasheet - Page 40

• Manufacturer Part Number: PMEG6010ER,115
• Description: SCHOTTKY RECT 60V 10A SOD128
• Manufacturer: NXP Semiconductors

Specifications of PMEG6010ER,115

• Package / Case: SOD-128 Flat Leads
• Voltage - Forward (vf) (max) @ If: 530mV @ 1A
• Voltage - Dc Reverse (vr) (max): 60V
• Current - Average Rectified (io): 1A (DC)
• Current - Reverse Leakage @ Vr: 60µA @ 60V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Capacitance @ Vr, F: 120pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Product: Schottky Diodes
• Peak Reverse Voltage: 60 V
• Forward Continuous Current: 1 A
• Max Surge Current: 50 A
• Configuration: Single
• Forward Voltage Drop: 0.53 V
• Maximum Reverse Leakage Current: 60 uA
• Operating Temperature Range: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934061463115

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Power MOSFETs
Power MOSFETs single (N-channel)
V
DS
(max) (V)
20
25
(mΩ) @ V
R
DSon
10 V
2.65
4.95
10.5
1.2
1.5
2.5
2.8
5.5
5.8
6.3
6.3
6.6
9.5
4
6
9
9
9
(max)
-
-
-
-
-
gs
=
@ V
R
DSon
16 @ 5 V
20 @ 5 V
gs
(mΩ)
1.85
10.6
3.7
2.7
2.2
3.9
4.1
8.2
9.5
= 4.5 V
13
5
3
(max)
-
-
-
-
-
-
-
-
-
I
D
(max) (A) @
25 °C
44.7
10.9
78.7
66.4
100
100
100
100
100
100
81.7
100
32
99
75
75
75
75
75
66
61
75
66
PSMN1R2-25YL
PSMN1R5-25YL
Power-SO8
3.95 x 4.9 x 1.1
(LFPAK)
PH2520U
PH2925U
PH3120L
PH2525L
PH2625L
PH4025L
PH5525L
PH6325L
PH9025L
PHP78NQ03LT
TO-220AB
15.6 x 10 x 4.4
(SOT78)
PHB66NQ03LT
(SOT404)
11 x 10 x 4.3
D2PAK
PHD108NQ03LT
PHD96NQ03LT
PSMN005-25D
PHD97NQ03LT
PHD78NQ03LT
PHD66NQ03LT
PHD77NQ03T
PHD38N02LT
(SOT428)
6 x 6.6 x 2.3
DPAK
Power MOSFETs
PSMN006-20K
PHKD6N02LT
4.9 x 3.9 x 1.75
(SOT96-1)
types in bold represent new products
SO8
PHU97NQ03LT
PHU78NQ03LT
PHU77NQ03T
(SOT533)
6 x 6.6 x 2.3
IPAK
LFPAK pins provide compliance and allow for thermal expansion due to temperature difference
between the MOSFET & PCB and also mechanical strain due to PCB bending & fl exing
QFN sawn or micro-lead pins are fully encapsulated and do not allow for movement.
Cracks in the mould compound can lead to moisture ingress & ionic contamination
causing early failure of the MOSFET
LFPAK for mechanical & thermal ruggedness
NXP LFPAK
QFN Based Power-S08
Movement due to thermal and/or mechanical stress in PCB
Movement due to thermal and/or
mechanical stress in PCB
mechanical movement
Lead absorbs any
79