PMEG6010ER,115 NXP Semiconductors, PMEG6010ER,115 Datasheet - Page 42

• Manufacturer Part Number: PMEG6010ER,115
• Description: SCHOTTKY RECT 60V 10A SOD128
• Manufacturer: NXP Semiconductors

Specifications of PMEG6010ER,115

• Package / Case: SOD-128 Flat Leads
• Voltage - Forward (vf) (max) @ If: 530mV @ 1A
• Voltage - Dc Reverse (vr) (max): 60V
• Current - Average Rectified (io): 1A (DC)
• Current - Reverse Leakage @ Vr: 60µA @ 60V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Capacitance @ Vr, F: 120pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Product: Schottky Diodes
• Peak Reverse Voltage: 60 V
• Forward Continuous Current: 1 A
• Max Surge Current: 50 A
• Configuration: Single
• Forward Voltage Drop: 0.53 V
• Maximum Reverse Leakage Current: 60 uA
• Operating Temperature Range: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934061463115

82
Power MOSFETs
Power MOSFETs single (N-channel)
Power-SO8 (LFPAK) Design
 Low Thermal resistance
 Low Electrical resistance
 Low Inductance
(max)
V
(V)
60
75
80
DS
PCB
2 Part Leadframe
@ V
50 @ 11 V
(max)
(mΩ)
gs
R
16.5
12.9
17.0
19.5
27.5
150
3.6
22
5.6
8.5
28
4.1
4.7
6.4
6.5
8.5
8.7
46
46
DSon
13
16
11
11
= 10 V
5
5
9
-
@ V
(max)
gs
R
(mΩ)
43
34
DSon
= 4.5 V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
@ 25 °C
(max)
10.3
45.8
(A)
100
100
Chip
I
75
52
34
75
75
75
75
75
75
73
30
27
82
74
60
34
22
D
-
-
-
-
-
-
-
Plastic
PCB
PSMN6R0-80YS
PSMN8R2-80YS
PSMN013-80YS
PSMN018-80YS
PSMN026-80YS
PSMN045-80YS
PSMN011-80YS
Power-SO8
3.95 x 4.9 x 1.1
(LFPAK)
PH1875L
PH3075L
PSMN4R4-80PS
PSMN5R0-80PS
PSMN6R5-80PS
PSMN050-80PS
PSMN8R7-80PS
PSMN012-80PS
PSMN017-80PS
PHP165NQ08T
PHP160NQ08T
PHP110NQ08T
PSMN005-75P
PSMN008-75P
PHP79NQ08LT
PHP75NQ08T
PHP32N06LT
TO-220AB
15.6 x 10 x 4.4
PHP52N06T
PHP29N08T
PHP3055E
(SOT78)
PHB160NQ08T
PSMN004-60B
PSMN005-75B
PSMN008-75B
PHB110NQ08T
PHB32N06LT
PHB29N08T
(SOT404)
11 x 10 x 4.3
D2PAK
types in bold represent new products
(SOT428)
PHD3055E
6 x 6.6 x 2.3
DPAK
Power MOSFETs
NXP Power solutions make your PC Energy Effi cient
MOSFETs for high effi ciency power management
Smaller, faster, cooler
 Class leading LFPAK package with state of the art Trench 6 silicon technology
High performance MOSFETs for DC-DC converters,
OR-ing and load switching
 Supported by Secure supply/Capacity availability (Silicon & Package)
- Smaller : Power-SO8 form factor LFPAK
- Faster : Best in class switching performance
- Cooler : Higher effi ciency equals lower temperatures
- Easier : easier to use in development and production than other Power-SO8 packages
(max)
100
V
(V)
105
110
DS
@ V
(max)
R
(mΩ)
gs
8.8
DSon
15
23
25
25
25
28
28
38
40
50
90
90
90
25
15
40
50
70
90
= 10 V
@ V
(max)
gs
(mΩ)
R
DSon
= 4.5 V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
6.3 @ 80 °C
@ 25 °C
(max)
34.3
(A)
11.6
27.6
I
75
75
47
47
47
47
35
28
18
47
75
35
23
18
3
3
D
Power-SO8
3.95 x 4.9 x 1.1
PH20100S
(LFPAK)
PSMN009-100P
PSMN015-100P
PSMN015-110P
PHP45NQ10TA
PHP45NQ10T
PHP18NQ10T
PHP45NQ11T
PHP34NQ11T
PHP27NQ11T
PHP23NQ11T
PHP18NQ11T
TO-220AB
15.6 x 10 x 4.4
(SOT78)
PSMN009-100B
PSMN015-100B
PHB45NQ10T
PHB47NQ10T
PHB27NQ10T
PHB18NQ10T
(SOT404)
11 x 10 x 4.3
D2PAK
PSMN025-100D
PHD34NQ10T
PHD18NQ10T
(SOT428)
6 x 6.6 x 2.3
DPAK
PSMN038-100K
PHKD3NQ10T
PHK12NQ10T
4.9 x 3.9 x 1.75
(SOT96-1)
SO8
83