BYW4200B-TR STMicroelectronics, BYW4200B-TR Datasheet

DIODE FAST REC 4A 200V DPAK

BYW4200B-TR

Manufacturer Part Number
BYW4200B-TR
Description
DIODE FAST REC 4A 200V DPAK
Manufacturer
STMicroelectronics
Datasheet

Specifications of BYW4200B-TR

Voltage - Forward (vf) (max) @ If
1.25V @ 12A
Voltage - Dc Reverse (vr) (max)
200V
Current - Average Rectified (io)
4A
Current - Reverse Leakage @ Vr
10µA @ 200V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
35ns
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Product
Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
200 V
Forward Voltage Drop
1.25 V at 12 A
Recovery Time
35 ns
Forward Continuous Current
4 A
Max Surge Current
70 A
Reverse Current Ir
10 uA
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
 Details

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BYW4200B-TR
Manufacturer:
ST
Quantity:
92 500
Part Number:
BYW4200B-TR
Manufacturer:
ST
0
MAIN PRODUCT CHARACTERISTICS
FEATURES AND BENEFITS
DESCRIPTION
Single chip rectifier suited to Switch Mode Power
Supplies and high frequency converters.
Packaged in DPAK and SMC, this surface mount
device is intended for use in low voltage, high
frequency inverters, free wheeling and rectification
applications.
ABSOLUTE RATINGS (limiting values)
October 1999 - Ed: 4C
Symbol
I
SUITED TO SMPS AND DRIVES
SURFACE MOUNT PACKAGE
VERY LOW FORWARD LOSSES
NEGLIGIBLE SWITCHING LOSSES
HIGH SURGE CURRENT CAPABILITY
V
F(RMS)
I
Tstg
I
F(AV)
FSM
RRM
Tj
V
Tj (max)
F
V
I
F(AV)
(max)
®
RRM
Repetitive peak reverse voltage
RMS forward current
Average forward current
Surge non repetitive forward current
Storage temperature range
Maximum operating junction temperature
= 0.5
HIGH EFFICIENCY FAST RECOVERY DIODE
150 °C
0.85 V
200 V
4 A
Parameter
DPAK
SMC
BYW4200B
Tcase = 130°C
Tlead = 70°C
tp = 10 ms
sinusoidal
4
3
DPAK
1(nc)
SMBYW04-200
2
4 (TAB)
2
3
- 65 to + 150
BYW4200B
(JEDEC DO-214AB)
Value
200
150
10
70
SMBYW04-200
4
SMC
Unit
°C
V
A
A
A
C
1/6

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BYW4200B-TR Summary of contents

Page 1

... FSM Tstg Storage temperature range Tj Maximum operating junction temperature October 1999 - Ed 200 V 0. 150 °C 4 DPAK BYW4200B Parameter DPAK Tcase = 130°C SMC Tlead = 70° sinusoidal SMBYW04-200 BYW4200B 2 4 (TAB 1(nc) SMC (JEDEC DO-214AB) SMBYW04-200 Value Unit 200 150 C 150 °C ...

Page 2

... SMBYW04-200 / BYW4200B THERMAL RESISTANCE Symbol Parameter R Junction to case th (j-c) R Junction to leads th (j-l) STATIC ELECTRICAL CHARACTERISTICS Symbol Tests Conditions I * Reverse leakage current Forward voltage drop F Pulse test : * ms, < 380 s, < evaluate the maximum conduction losses use the following equation : 0 0.037 I F(AV) F (RMS) ...

Page 3

... Ta=25° Ta=50° 1E-3 1E-1 1E+0 Fig. 6-2: Variation of thermal impedance junction to case versus pulse duration (BYW4200B). Zth(j-c)/Rth(j-c) 1.0 = 0.5 0.5 = 0.2 = 0.1 0.2 T Single pulse =tp/T tp 0.1 1E+2 5E+2 1E-3 SMBYW04-200 / BYW4200B Tj=100°C (Typical values) Tj=25°C Tj=100° ...

Page 4

... SMBYW04-200 / BYW4200B Fig. 7: Reverse recovery current versus dI IRM(A) 2.5 IF=IF(av) 90% confidence 2.0 1.5 1.0 0.5 0 Fig. 9: Junction capacitance versus reverse voltage applied (typical values). C(pF) 100 50 20 VR( Fig. 11-1: Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, copper thickness: 35mm) (SMBYW04-200). Rth(j-a) (° ...

Page 5

... PACKAGE MECHANICAL DATA DPAK FOOT PRINT (in millimeters) 6.7 1.6 2.3 2.3 REF 6 1.6 SMBYW04-200 / BYW4200B DIMENSIONS Millimeters Inches Min. Max Min. Max. 2.20 2.40 0.086 0.094 0.90 1.10 0.035 0.043 0.03 0.23 0.001 0.009 0.64 0.90 0.025 0.035 5.20 5.40 0.204 ...

Page 6

... SMBYW04-200 / BYW4200B PACKAGE MECHANICAL DATA SMC FOOT PRINT (in millimeters) 2.0 4.2 Ordering code Marking SMBYW04-200 D20 BYW4200B W4200 BYW4200B-RL W4200 Epoxy meets UL 94,V0 Band indicates cathode Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics ...

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