BYW4200B-TR STMicroelectronics, BYW4200B-TR Datasheet - Page 4

DIODE FAST REC 4A 200V DPAK

BYW4200B-TR

Manufacturer Part Number
BYW4200B-TR
Description
DIODE FAST REC 4A 200V DPAK
Manufacturer
STMicroelectronics
Datasheet

Specifications of BYW4200B-TR

Voltage - Forward (vf) (max) @ If
1.25V @ 12A
Voltage - Dc Reverse (vr) (max)
200V
Current - Average Rectified (io)
4A
Current - Reverse Leakage @ Vr
10µA @ 200V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
35ns
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Product
Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
200 V
Forward Voltage Drop
1.25 V at 12 A
Recovery Time
35 ns
Forward Continuous Current
4 A
Max Surge Current
70 A
Reverse Current Ir
10 uA
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
 Details

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BYW4200B-TR
Manufacturer:
ST
Quantity:
92 500
Part Number:
BYW4200B-TR
Manufacturer:
ST
0
SMBYW04-200 / BYW4200B
Fig. 7: Reverse recovery current versus dI
2.5
2.0
1.5
1.0
0.5
0.0
Fig. 9: Junction capacitance versus reverse
voltage applied (typical values).
100
Fig. 11-1: Thermal resistance junction to ambient
versus copper surface under each lead (Epoxy
printed circuit board FR4, copper thickness:
35mm) (SMBYW04-200).
100
4/6
90
80
70
60
50
40
30
20
10
50
20
10
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
1
1
IRM(A)
Rth(j-a) (°C/W)
C(pF)
90% confidence
IF=IF(av)
S(Cu) (cm²)
10
VR(V)
10
Tj=100°C
dIF/dt(A/µs)
Tj=25°C
100
F=1MHz
Tj=25°C
F
/dt.
200
100
Fig. 8: Reverse recovery time versus dI
Fig. 10: Dynamic parameters versus junction
temperature.
Fig. 11-2: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, copper thickness: 35mm)
(BYW4200B).
100
250
200
150
100
100
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
0
0
25
1
0
Rth(j-a) (°C/W)
trr(ns)
%
dIF/dt=50A/µs
VR=30V
IF=4A
2
50
4
6
S(Cu) (cm²)
75
8
dIF/dt(A/µs)
10
10
Tj=25°C
100
12
Tj=100°C
14
Qrr
125
Tj(°C)
90% confidence
16
F
/dt.
IF=IF(av)
IRM
18
trr
100
150
20

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