STGB10NC60KT4 STMicroelectronics, STGB10NC60KT4 Datasheet - Page 2

• Manufacturer Part Number: STGB10NC60KT4
• Description: IGBT N-CHAN 600V 10A D2PAK
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGB10NC60KT4

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 5A
• Current - Collector (ic) (max): 20A
• Power - Max: 60W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Other names: 497-5737-2

Electrical ratings
1
2/11
Electrical ratings
Table 2.
1. Calculated according to the iterative formula:
2. V
3. Pulse width limited by maximum junction temperature and turn-off within RBSOA
Table 3.
Symbol
Symbol
I
I
V
T
P
t
I
I
CP
CL
V
SCW
R
C
C
R
clamp
CES
STG
T
TOT
GE
thJC
thJA
(1)
(1)
J
(2)
(3)
= 80 % V
Collector-emitter voltage (V
Continuous collector current at T
Continuous collector current at T
Turn-off latching current
Pulsed collector current
Gate-emitter voltage
Total dissipation at T
Storage temperature
Operating junction temperature
Short-circuit withstand time (V
T
Absolute maximum ratings
Thermal data
J
Thermal resistance junction-case
Thermal resistance junction-ambient
= 125 °C, R
CES
, V
GE
I
C
= 15 V, R
(
G
T
= 10 Ω, V
C
)
Parameter
=
C
Doc ID 11842 Rev 4
Parameter
G
= 25°C
-------------------------------------------------------------------------------------------------------
R
= 10 Ω, T
thj c
GE
–
GE
= 12 V)
×
CE
= 0)
V
J
C
C
CE sat
= 0.5 V
= 150 °C
= 25°C
= 100°C
(
T
j max
(
) max
(
CES
)
–
,
)
(
T
T
C
j max
(
)
,
I
C
(
T
– 55 to 150
C
)
)
Value
Value
±20
600
62.5
20
10
30
30
65
10
1.9
STGB10NC60K
°C/W
°C/W
Unit
Unit
°C
µs
W
V
A
A
A
A
V