STGB10NC60KT4 STMicroelectronics, STGB10NC60KT4 Datasheet - Page 3

IGBT N-CHAN 600V 10A D2PAK

STGB10NC60KT4

Manufacturer Part Number
STGB10NC60KT4
Description
IGBT N-CHAN 600V 10A D2PAK
Manufacturer
STMicroelectronics
Series
PowerMESH™r
Datasheet

Specifications of STGB10NC60KT4

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.5V @ 15V, 5A
Current - Collector (ic) (max)
20A
Power - Max
60W
Input Type
Standard
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Other names
497-5737-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STGB10NC60KT4
Manufacturer:
ST
Quantity:
12 500
Part Number:
STGB10NC60KT4
Manufacturer:
ST
0
STGB10NC60K
2
Electrical characteristics
T
Table 4.
1. Pulse test: pulse duration < 300 µs, duty cycle < 2 %.
Table 5.
Table 6.
V
Symbol
(di/dt)
(di/dt)
Symbol
J
Symbol
V
t
t
V
t
t
(BR)CES
t
t
r
r
g
= 25 °C unless otherwise specified.
d
d
CE(sat)
I
d(on)
d(on)
(V
(V
I
C
GE(th)
C
C
Q
Q
CES
GES
fs
(
(
Q
t
t
t
t
off
off
oes
r
r
f
f
res
ies
off
off
ge
gc
(1)
g
)
)
on
on
)
)
Turn-on delay time
Current rise time
Turn-on current slope
Turn-on delay time
Current rise time
Turn-on current slope
Off voltage rise time
Turn-off delay time
Current fall time
Off voltage rise time
Turn-off delay time
Current fall time
Collector-emitter breakdown
voltage (V
Collector-emitter saturation
voltage
Gate threshold voltage
Collector cut-off current
(V
Gate-emitter leakage
current (V
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
GE
Static
Dynamic
Switching on/off (inductive load)
= 0)
Parameter
Parameter
Parameter
CE
GE
= 0)
= 0)
Doc ID 11842 Rev 4
V
R
(see Figure 18)
V
R
(see Figure 18)
V
R
(see Figure 18)
V
R
(see Figure 18)
I
V
V
V
V
V
V
V
CC
CC
cc
cc
G
G
GE
GE
V
V
V
V
(see Figure 17)
C
GE
GE
CE
CE
CE
GE
CE
= 10Ω, V
= 10Ω, V
= 1mA
CE
GE
CE
GE
= 390V, I
= 390V, I
=10Ω, V
= 390V, I
= 390V, I
= 10Ω, V
= 15V, I
= 15V, I
= V
= ± 20 V
= 600 V
= 600 V, T
= 15 V
= 25V, f = 1MHz,
= 0
= 390V, I
= 15V,
Test conditions
Test conditions
Test conditions
GE
, I
GE
GE
,
GE
C
C
C
C
C
I
C
C
GE
C
= 5A
= 5A, T
= 15V,
= 15V, Tj=125°C
= 250 µA
= 5A,
= 5A,
C
= 5A
= 5A
=15V, Tj=125°C
= 5A
J
= 15V,
= 5A,
= 125 °C
J
=125°C
Electrical characteristics
Min.
Min.
600
4.5
Min.
Typ.
Typ.
380
8.5
2.2
1.8
15
46
19
5
9
Typ.
16.5
655
575
106
136
6.5
17
33
72
82
60
6
Max.
Max.
±100
150
6.5
2.5
Max. Unit
1
Unit
Unit
A/µs
A/µs
mA
nC
nC
nC
pF
pF
pF
µA
nA
V
V
V
V
S
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
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