STGB10NC60KDT4 STMicroelectronics, STGB10NC60KDT4 Datasheet - Page 16

• Manufacturer Part Number: STGB10NC60KDT4
• Description: IGBT N-CHAN 600V 10A D2PAK
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGB10NC60KDT4

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 5A
• Current - Collector (ic) (max): 20A
• Power - Max: 65W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Type: IGBT
• Dc Collector Current: 20A
• Collector Emitter Voltage Vces: 2.5V
• Power Dissipation Pd: 60W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Other names: 497-5736-2

Package mechanical data
16/20
Table 12.
Figure 25. TO-220 type A package drawing
Dim.
L20
L30
∅P
D1
H1
b1
e1
L1
J1
Q
A
D
E
b
e
F
L
c
TO-220 type A mechanical data
15.25
Doc ID 11423 Rev 6
Min.
4.40
0.61
1.14
0.48
2.40
4.95
1.23
6.20
2.40
3.50
3.75
2.65
10
13
16.40
28.90
Typ.
1.27
mm
STGx10NC60KD
15.75
10.40
Max.
4.60
0.88
1.70
0.70
2.70
5.15
1.32
6.60
2.72
3.93
3.85
2.95
14
0015988_S