STGB10NC60KDT4 STMicroelectronics, STGB10NC60KDT4 Datasheet - Page 8

• Manufacturer Part Number: STGB10NC60KDT4
• Description: IGBT N-CHAN 600V 10A D2PAK
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGB10NC60KDT4

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 5A
• Current - Collector (ic) (max): 20A
• Power - Max: 65W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Type: IGBT
• Dc Collector Current: 20A
• Collector Emitter Voltage Vces: 2.5V
• Power Dissipation Pd: 60W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Other names: 497-5736-2

Electrical characteristics
2.1
8/20
Figure 2.
Figure 4.
Figure 6.
Electrical characteristics (curves)
Output characteristics
Transconductance
Gate charge vs gate-source voltage Figure 7.
Doc ID 11423 Rev 6
Figure 3.
Figure 5.
Transfer characteristics
Collector-emitter on voltage vs
temperature
Capacitance variations
STGx10NC60KD