STGF19NC60KD STMicroelectronics, STGF19NC60KD Datasheet - Page 7

• Manufacturer Part Number: STGF19NC60KD
• Description: MOSFET N-CH 600V TO-220FP
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGF19NC60KD

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.75V @ 15V, 12A
• Current - Collector (ic) (max): 16A
• Power - Max: 32W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

STGB19NC60KD - STGF19NC60KD - STGP19NC60KD
2.1
Figure 2.
Figure 4.
Figure 6.
I
C
100
Gfs(S)
(A)
80
60
40
20
0
7.5
6.5
5.5
4.5
3.5
2.5
1.5
0
8
7
6
5
4
3
2
2
Electrical characteristics (curves)
Output characteristics
5
Transconductance
Gate charge vs gate-source voltage Figure 7.
4
10
6
15
8
20
T
V
J
GE
=-50°C
13V
12V
14V
=15V
10
25
T
J
11V
T
HV43110
=125°C
J
=25°C
30
12
HV43020
9V
10V
8V
I
V
C
CE
(A)
(V)
Figure 3.
Figure 5.
2 0 0 0
C ( p F )
1 5 0 0
1 0 0 0
V
5 0 0
CE(sat)
0
I
C
100
(A)
2.4
2.3
2.0
80
60
40
20
2.1
1.8
1.7
1.5
1.4
1.2
(V)
0
0
-75
0
Cres
-50 -25
Transfer characteristics
Collector-emitter on voltage vs
temperature
Capacitance variations
3
10
5
0
V
25
2 0
CE
8
Electrical characteristics
= 15 V
50
10
75 100 125 150
3 0
13
HV43025
15
HV43100_b
4 0
Coes
V
Cies
25A
12A
6A
HV43000
GE
V
T
(V)
C E
J(°C)
( V )
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