STGF19NC60KD STMicroelectronics, STGF19NC60KD Datasheet - Page 8

• Manufacturer Part Number: STGF19NC60KD
• Description: MOSFET N-CH 600V TO-220FP
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGF19NC60KD

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.75V @ 15V, 12A
• Current - Collector (ic) (max): 16A
• Power - Max: 32W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

Electrical characteristics
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Figure 8.
Figure 10. Normalized breakdown voltage vs
Figure 12. Switching losses vs gate resistance Figure 13. Switching losses vs collector
V
BV
0.80
0.75
0.70
1.15
1.10
1.05
1.00
0.95
0.90
0.85
(norm)
GE(th)
(norm)
1.00
0.98
0.96
0.94
1.06
1.04
1.02
1.10
1.08
CES
-100
-100
Normalized gate threshold voltage
vs temperature
temperature
-50
-50
I
C
=250µA
0
0
I
C
=250µA
50
50
100
100
150
150
HV43080
HV43070
T
T
J
J
(°C)
(°C)
STGB19NC60KD - STGF19NC60KD - STGP19NC60KD
Figure 9.
Figure 11. Switching losses vs temperature
V
2.55
2.05
CE(sat)
1.55
1.05
2.3
0.8
1.8
1.3
(V)
0
Collector-emitter on voltage vs
collector current
current
-50°C
5
10
125°C
15
25°C
20
25
30
35
HV43090
40
I
C
(A)