IRGB10B60KDPBF International Rectifier, IRGB10B60KDPBF Datasheet - Page 4

• Manufacturer Part Number: IRGB10B60KDPBF
• Description: IGBT W/DIODE 600V 22A TO-220AB
• Manufacturer: International Rectifier
• Type: Ultrafastr

Specifications of IRGB10B60KDPBF

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 10A
• Current - Collector (ic) (max): 22A
• Power - Max: 156W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Capacitance, Gate: 620 pF
• Current, Collector: 22 A
• Energy Rating: 390 μJ
• Package Type: TO-220AB
• Polarity: N-Channel
• Power Dissipation: 156 W
• Resistance, Thermal, Junction To Case: 0.8 °C/W
• Speed, Switching: 10 to 30 kHz
• Voltage, Collector To Emitter Shorted: 600 V
• Voltage, Collector To Emitter, Saturation: 1.8 V
• Transistor Type: IGBT
• Dc Collector Current: 22A
• Collector Emitter Voltage Vces: 2.2V
• Power Dissipation Pd: 104W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRGB10B60KDPBF

IRG/B/S/SL10B60KDPbF
4
Fig. 7 - Typ. IGBT Output Characteristics
40
35
30
25
20
15
10
40
35
30
25
20
15
10
5
0
Fig. 5 - Typ. IGBT Output Characteristics
5
0
0
0
V GE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
V GE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
T
1
1
J
T
= 150°C; tp = 80µs
J
= -40°C; tp = 80µs
2
2
V CE (V)
V CE (V)
3
3
4
4
5
5
6
6
Fig. 8 - Typ. Diode Forward Characteristics
Fig. 6 - Typ. IGBT Output Characteristics
40
35
30
25
20
15
10
40
35
30
25
20
15
10
5
0
5
0
0.0
0
V GE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
T
0.5
J
1
= 25°C; tp = 80µs
tp = 80µs
1.0
2
-40°C
25°C
150°C
V CE (V)
V F (V)
1.5
3
2.0
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4
2.5
5
3.0
6