IRGB10B60KDPBF International Rectifier, IRGB10B60KDPBF Datasheet - Page 7

• Manufacturer Part Number: IRGB10B60KDPBF
• Description: IGBT W/DIODE 600V 22A TO-220AB
• Manufacturer: International Rectifier
• Type: Ultrafastr

Specifications of IRGB10B60KDPBF

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 10A
• Current - Collector (ic) (max): 22A
• Power - Max: 156W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Capacitance, Gate: 620 pF
• Current, Collector: 22 A
• Energy Rating: 390 μJ
• Package Type: TO-220AB
• Polarity: N-Channel
• Power Dissipation: 156 W
• Resistance, Thermal, Junction To Case: 0.8 °C/W
• Speed, Switching: 10 to 30 kHz
• Voltage, Collector To Emitter Shorted: 600 V
• Voltage, Collector To Emitter, Saturation: 1.8 V
• Transistor Type: IGBT
• Dc Collector Current: 22A
• Collector Emitter Voltage Vces: 2.2V
• Power Dissipation Pd: 104W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRGB10B60KDPBF

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25
20
15
10
25
20
15
10
5
0
5
0
Fig. 19- Typical Diode I
0
0
Fig. 17 - Typical Diode I
V
I
CC
CE
R G = 10 Ω
= 10A; T
5
= 400V; V
T
500
J
= 150°C
di F /dt (A/µs)
10
J
R G = 22 Ω
R G = 47 Ω
R G = 100 Ω
I F (A)
= 150°C
GE
= 15V;
RR
15
vs. di
RR
1000
vs. I
F
/dt
20
F
1500
IRG/B/S/SL10B60KDPbF
25
25
20
15
10
1200
1100
1000
5
0
900
800
700
600
500
400
V
0
Fig. 18 - Typical Diode I
CC
0
Fig. 20 - Typical Diode Q
= 400V; V
20A
5.0A
100 Ω
T
10A
J
= 150°C; I
50
500
GE
47 Ω
di F /dt (A/µs)
= 15V;T
R G ( Ω)
F
22 Ω
= 10A
J
10 Ω
1000
100
RR
= 150°C
vs. R
RR
G
1500
7
150