STGW30NC60KD STMicroelectronics, STGW30NC60KD Datasheet - Page 4

IGBT N-CH 30A 600V TO-247

STGW30NC60KD

Manufacturer Part Number
STGW30NC60KD
Description
IGBT N-CH 30A 600V TO-247
Manufacturer
STMicroelectronics
Series
PowerMESH™r
Datasheet

Specifications of STGW30NC60KD

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.7V @ 15V, 20A
Current - Collector (ic) (max)
60A
Power - Max
200W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3
Transistor Type
IGBT
Dc Collector Current
60A
Collector Emitter Voltage Vces
600V
Power Dissipation Pd
200W
Operating Temperature Range
-55°C To +150°C
No. Of Pins
3
Configuration
Single
Collector- Emitter Voltage Vceo Max
600 V
Maximum Gate Emitter Voltage
+/- 20 V
Maximum Operating Temperature
+ 150 C
Continuous Collector Current Ic Max
60 A
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-7485-5
STGW30NC60KD

Available stocks

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Part Number
Manufacturer
Quantity
Price
Part Number:
STGW30NC60KD
Manufacturer:
ST
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Part Number:
STGW30NC60KD
Manufacturer:
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Quantity:
20 000
Part Number:
STGW30NC60KD,STGW50NC60W,GW30NC60KD,GW50NC60W,
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Electrical characteristics
2
4/14
Electrical characteristics
(T
Table 4.
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Table 5.
V
Symbol
Symbol
V
CASE
V
(BR)CES
g
CE(sat)
C
I
I
C
C
GE(th)
Q
Q
CES
GES
Q
fs
oes
ies
res
ge
gc
g
(1)
=25°C unless otherwise specified)
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
Collector-emitter breakdown
voltage (V
Collector-emitter saturation
voltage
Collector cut-off current
(V
Gate threshold voltage
Gate-emitter cut-off
current (V
Forward transconductance
Static
Dynamic
GE
= 0)
Parameter
Parameter
CE
GE
= 0)
= 0)
V
V
V
(see Figure 18)
I
V
V
T
V
V
V
V
V
C
GE
CE
CE
C
GE
GE
CE
CE
CE
GE
CE
= 1 mA
= 125 °C
= 15 V, I
= 15 V, I
= V
= ±20 V
= 25 V, f = 1 MHz, V
= 480 V, I
= 15 V
= 600 V
= 600 V, T
= 15 V
Test conditions
Test conditions
GE
, I
,
C
C
C
I
= 250 µA
= 20 A
= 20 A,
C
C
C
= 20 A
= 20 A,
= 125 °C
GE
= 0
Min. Typ. Max.
Min.
600
4.5
2170
STGW30NC60KD
230
46
96
18
46
Typ.
2.1
1.9
15
Max. Unit
±100
150
2.7
6.5
1
Unit
nC
nC
nC
pF
pF
pF
mA
µA
nA
V
V
V
V
S

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