STGW30NC60KD STMicroelectronics, STGW30NC60KD Datasheet - Page 9

• Manufacturer Part Number: STGW30NC60KD
• Description: IGBT N-CH 30A 600V TO-247
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGW30NC60KD

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 20A
• Current - Collector (ic) (max): 60A
• Power - Max: 200W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Transistor Type: IGBT
• Dc Collector Current: 60A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 200W
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 3
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 60 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-7485-5; STGW30NC60KD

STGW30NC60KD
Figure 14. Thermal Impedance
Figure 16. Forward voltage drop versus
120
110
100
IFM(A)
90
80
70
60
50
40
30
20
10
0
0
1
forward current
(Typical values)
(Typical values)
Tj=125˚C
Tj=125˚C
2
(Maximum values)
(Maximum values)
Tj=125˚C
Tj=125˚C
3
VFM(V)
4
(Maximum values)
Tj=25˚C
5
6
Figure 15. Turn-off SOA
Electrical characteristics
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