J175,116 NXP Semiconductors, J175,116 Datasheet

JFET P-CHAN 30V SOT-54

J175,116

Manufacturer Part Number
J175,116
Description
JFET P-CHAN 30V SOT-54
Manufacturer
NXP Semiconductors
Datasheets

Specifications of J175,116

Package / Case
TO-236-3, SC-59, SOT-23-3
Current - Drain (idss) @ Vds (vgs=0)
7mA @ 15V
Drain To Source Voltage (vdss)
30V
Fet Type
P-Channel
Voltage - Breakdown (v(br)gss)
30V
Voltage - Cutoff (vgs Off) @ Id
3V @ 10nA
Input Capacitance (ciss) @ Vds
8pF @ 10V (VGS)
Resistance - Rds(on)
125 Ohm
Mounting Type
Through Hole
Power - Max
400mW
Configuration
Single
Transistor Polarity
P-Channel
Drain Source Voltage Vds
30 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
70 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934005300116
J175 T/R
J175 T/R
Product specification
File under Discrete Semiconductors, SC07
DATA SHEET
J174; J175;
J176; J177
P-channel silicon field-effect
transistors
DISCRETE SEMICONDUCTORS
April 1995

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J175,116 Summary of contents

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DISCRETE SEMICONDUCTORS DATA SHEET J174; J175; J176; J177 P-channel silicon field-effect transistors Product specification File under Discrete Semiconductors, SC07 April 1995 ...

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Philips Semiconductors P-channel silicon field-effect transistors DESCRIPTION Silicon symmetrical p-channel junction FETs in a plastic TO-92 envelope and intended for application with analog switches, choppers, commutators etc. A special feature is the interchangeability of the drain and source connections. PINNING ...

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Philips Semiconductors P-channel silicon field-effect transistors RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage Gate-source voltage Gate-drain voltage Gate current (DC) Total power dissipation amb Storage temperature range ...

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Philips Semiconductors P-channel silicon field-effect transistors DYNAMIC CHARACTERISTICS unless otherwise specified j Input capacitance MHz Feedback ...

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Philips Semiconductors P-channel silicon field-effect transistors PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads DIMENSIONS (mm are the original dimensions) UNIT 5.2 0.48 0.66 0.45 ...

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Philips Semiconductors P-channel silicon field-effect transistors DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This ...

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