J175,116 NXP Semiconductors, J175,116 Datasheet - Page 5

• Manufacturer Part Number: J175,116
• Description: JFET P-CHAN 30V SOT-54
• Manufacturer: NXP Semiconductors

Specifications of J175,116

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Current - Drain (idss) @ Vds (vgs=0): 7mA @ 15V
• Drain To Source Voltage (vdss): 30V
• Fet Type: P-Channel
• Voltage - Breakdown (v(br)gss): 30V
• Voltage - Cutoff (vgs Off) @ Id: 3V @ 10nA
• Input Capacitance (ciss) @ Vds: 8pF @ 10V (VGS)
• Resistance - Rds(on): 125 Ohm
• Mounting Type: Through Hole
• Power - Max: 400mW
• Configuration: Single
• Transistor Polarity: P-Channel
• Drain Source Voltage Vds: 30 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 70 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934005300116; J175 T/R; J175 T/R

PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads
Philips Semiconductors
April 1995
DIMENSIONS (mm are the original dimensions)
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
P-channel silicon field-effect transistors
UNIT
mm
VERSION
OUTLINE
SOT54
D
5.2
5.0
A
0.48
0.40
d
b
E
3
1
2
0.66
0.56
b 1
IEC
b
1
0.45
0.40
c
4.8
4.4
D
JEDEC
TO-92
1.7
1.4
d
REFERENCES
0
4.2
3.6
E
2.54
A
e
SC-43
scale
EIAJ
2.5
5
1.27
e 1
14.5
12.7
5 mm
L
L 1
L 1
2.5
(1)
L
PROJECTION
EUROPEAN
Product specification
J174; J175;
J176; J177
ISSUE DATE
b
97-02-28
c
e 1
e
SOT54