IRF7751TRPBF International Rectifier, IRF7751TRPBF Datasheet - Page 4

• Manufacturer Part Number: IRF7751TRPBF
• Description: MOSFET P-CH DUAL 30V 4.5A 8TSSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7751TRPBF

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 35 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4.5A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 44nC @ 10V
• Input Capacitance (ciss) @ Vds: 1464pF @ 25V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP
• Configuration: Dual
• Transistor Polarity: Dual P-Channel
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 4.5 A
• Power Dissipation: 1 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 29 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7751TRPBF; IRF7751TRPBFTR

4
4000
3200
2400
1600
100
0.1
800
10
Fig 5. Typical Capacitance Vs.
1
Fig 7. Typical Source-Drain Diode
0
0.2
1
Drain-to-Source Voltage
0.4
-V
T = 150 C
-V
J
SD
C iss
C oss
C rss
DS
Forward Voltage
,Source-to-Drain Voltage (V)
V
C
C
C
0.6
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
°
=
=
=
=
0.8
0V,
C
C
C
gs
gd
ds
+ C
+ C
10
T = 25 C
1.0
f = 1MHz
J
gd ,
gd
C
1.2
°
ds
V
SHORTED
GS
1.4
= 0 V
1.6
100
100
14
12
10
0.1
Fig 8. Maximum Safe Operating Area
10
8
6
4
2
0
1
0.1
0
I =
Fig 6. Typical Gate Charge Vs.
D
T
T
Single Pulse
C
J
= 25 C °
= 150 C
-4.5A
OPERATION IN THIS AREA LIMITED
Gate-to-Source Voltage
-V
DS
Q , Total Gate Charge (nC)
G
°
10
, Drain-to-Source Voltage (V)
1
BY R
V
V
DS
DS
20
=-24V
=-15V
DS(on)
10
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30
10us
100us
1ms
10ms
100
40