IRF7751TRPBF International Rectifier, IRF7751TRPBF Datasheet - Page 5

• Manufacturer Part Number: IRF7751TRPBF
• Description: MOSFET P-CH DUAL 30V 4.5A 8TSSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7751TRPBF

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 35 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4.5A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 44nC @ 10V
• Input Capacitance (ciss) @ Vds: 1464pF @ 25V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP
• Configuration: Dual
• Transistor Polarity: Dual P-Channel
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 4.5 A
• Power Dissipation: 1 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 29 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7751TRPBF; IRF7751TRPBFTR

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1000
100
5.0
4.0
3.0
2.0
1.0
0.0
0.1
0.00001
10
1
Fig 9. Maximum Drain Current Vs.
25
D = 0.50
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.20
0.10
0.05
0.02
0.01
50
Case Temperature
T , Case Temperature ( C)
C
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
75
100
0.001
t , Rectangular Pulse Duration (sec)
125
1
°
0.01
150
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
0.1
V
10%
90%
V
GS
DS
t
d(on)
1. Duty factor D = t / t
2. Peak T = P
Notes:
≤ 0.1 %
≤ 1
t
r
1
J
DM
x Z
1
thJA
P
2
DM
t
+ T
d(off)
10
A
t
1
t
f
t
2
+
-
100
5