IRF7751TRPBF International Rectifier, IRF7751TRPBF Datasheet - Page 6

• Manufacturer Part Number: IRF7751TRPBF
• Description: MOSFET P-CH DUAL 30V 4.5A 8TSSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7751TRPBF

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 35 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4.5A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 44nC @ 10V
• Input Capacitance (ciss) @ Vds: 1464pF @ 25V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP
• Configuration: Dual
• Transistor Polarity: Dual P-Channel
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 4.5 A
• Power Dissipation: 1 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 29 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7751TRPBF; IRF7751TRPBFTR

6
0.100
0.080
0.060
0.040
0.020
Fig 12. Typical On-Resistance Vs.
Fig 14a. Basic Gate Charge Waveform
V
3.0
G
Q
4.0
GS
-V GS, Gate -to -Source Voltage (V)
Gate Voltage
5.0
Q
Charge
Q
GD
G
6.0
I D = -4.5A
7.0
8.0
9.0
10.0
0.200
0.150
0.100
0.050
0.000
Fig 13. Typical On-Resistance Vs.
Fig 14b. Gate Charge Test Circuit
0
12V
V
GS
VGS = -4.5V
Same Type as D.U.T.
Current Regulator
.2µF
10
Drain Current
-I D , Drain Current ( A )
50KΩ
-3mA
Current Sampling Resistors
.3µF
I
20
G
D.U.T.
VGS = -10V
www.irf.com
I
D
30
+
-
V
DS
40